2001 Jan 29 3
NXP Semiconductors Product specification
Silicon PIN diode BAP64-04W
ELECTRICAL CHARACTERISTICS
T
j
=25C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
forward voltage I
F
= 50 mA 0.95 1.1 V
I
R
reverse current V
R
= 100 V 10 A
V
R
=20V 1 A
C
d
diode capacitance V
R
= 0; f = 1 MHz 0.52 pF
V
R
= 1 V; f = 1 MHz 0.37 pF
V
R
= 20 V; f = 1 MHz 0.23 0.35 pF
r
D
diode forward resistance I
F
= 0.5 mA; f = 100 MHz; note 1 20 40
I
F
= 1 mA; f = 100 MHz; note 1 10 20
I
F
=10mA; f=100MHz; note1 2 3.8
I
F
= 100 mA; f = 100 MHz; note 1 0.7 1.35
L
charge carrier life time when switched from I
F
=10mA to
I
R
=6mA; R
L
=100;
measured at I
R
=3mA
1.55 s
L
S
series inductance I
F
= 100 mA; f = 100 MHz 1.6 nH
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 250 K/W