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MSB92T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 1
1 Publication Order Number:
MSB92T1G/D
MSB92T1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC−59 package
which is designed for low power surface mount applications.
Features
• This is a Pb−Free Device
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Value Unit
Collector-Base Voltage V
(BR)CBO
−300 Vdc
Collector-Emitter Voltage V
(BR)CEO
−300 Vdc
Emitter-Base Voltage V
(BR)EBO
−5.0 Vdc
Collector Current − Continuous I
C
150 mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation (Note 1) P
D
150 mW
Junction Temperature T
J
150 °C
Storage Temperature Range T
stg
−55X+150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
MARKING
DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
J2D= Device Marking Code
M = Date Code
G = Pb−Free Package
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
SC−59
CASE 318D
STYLE 1
J2D MG
G
MSB92T1G SC−59
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
MSB92T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−300 − Vdc
Collector-Base Breakdown Voltage
(I
C
= −100 mAdc, I
E
= 0)
V
(BR)CBO
−300 − Vdc
Emitter-Base Breakdown Voltage
(I
E
= −100 mAdc, I
E
= 0)
V
(BR)EBO
−5.0 − Vdc
Collector-Base Cutoff Current
(V
CB
= −200 Vdc, I
E
= 0)
I
CBO
− −0.25 mA
Emitter−Base Cutoff Current
(V
EB
= −3.0 Vdc, I
B
= 0)
I
EBO
− −0.1 mA
DC Current Gain (Note 2)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc)
(V
CE
= −10 Vdc, I
C
= −10 mAdc)
(V
CE
= −10 Vdc, I
C
= −30 mAdc)
h
FE1
h
FE2
h
FE3
25
40
25
−
−
−
−
Collector-Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
V
CE(sat)
− −0.5 Vdc
Base−Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
V
BE(sat)
− −0.9 Vdc
SMALL SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 20 MHz)
f
T
50 − MHz
Collector−Base Capacitance
(V
CB
= −20 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
− 6.0 pF
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
MSB92T1G
http://onsemi.com
3
C, CAPACITANCE (pF)
Figure 1. DC Current Gain
V
R
, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10
1000
C
eb
@ 1MHz
Figure 2. Capacitance
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
100
1.0
C
cb
@ 1MHz
V
BE(on)
@ 25°C, V
CE
= 10 V
V
CE(sat)
@ 25°C, I
C
/I
B
= 10
V
BE(sat)
@ 25°C, I
C
/I
B
= 10
V
CE(sat)
@ 125°C, I
C
/I
B
= 10
V
CE(sat)
@ -55°C, I
C
/I
B
= 10
V
BE(sat)
@ 125°C, I
C
/I
B
= 10
V
BE(sat)
@ -55°C, I
C
/I
B
= 10
V
BE(on)
@ 125°C, V
CE
= 10 V
V
BE(on)
@ -55°C, V
CE
= 10 V
Figure 3. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
120
0.1 1.0
10
100
80
60
0
h
FE
, DC CURRENT GAIN
T
J
= +125°C
25°C
-55°C
V
CE
= 10 Vdc
100
20
40
P1-P3P4-P4

MSB92T1G

Mfr. #:
Buy MSB92T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS HV XSTR PNP 300V
Lifecycle:
New from this manufacturer.
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