BSZ150N10LS3GATMA1

P1-P3 P4-P6 P7-P9

BSZ150N10LS3 G

OptiMOS

TM

3 Power-Transistor

Features

• Ideal for high frequency switching

• Optimized technology for DC/DC converters

• Excellent gate charge x R

DS(on)

product (FOM)

• N-channel, Logic level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC

1)

for target applications

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

V

GS

=10 V, T

C

=25 °C

40 A

V

GS

=10 V, T

C

=100 °C

30

V

GS

=10 V, T

A

=25 °C,

R

thJA

=60 K/W

2)

8

Pulsed drain current

3)

I

D,pulse

T

C

=25 °C

160

Avalanche energy, single pulse

4)

E

AS

I

D

=20 A, R

GS

=25 W

80 mJ

Gate source voltage

V

GS

±20 V

4)

See figure 13 for more detailed information

Value

1)

J-STD20 and JESD22

3)

See figure 3 for more detailed information

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

V

DS

100

V

R

DS(on),max

15

mW

I

D

40

A

Product Summary

Type

Package

Marking

BSZ150N10LS3 G

PG-TSDSON-8

150N10L

PG-TSDSON-8

Rev. 2.2 page 1 2013-01-28

BSZ150N10LS3 G

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Power dissipation

P

tot

T

C

=25 °C

63 W

T

A

=25 °C,

R

thJA

=60 K/W

2)

2.1

Operating and storage temperature

T

j

, T

stg

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

- - 2 K/W

Device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

2)

- - 60

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=1 mA

100 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=33 µA

1.1 1.7 2.1

Zero gate voltage drain current

I

DSS

V

DS

=100 V, V

GS

=0 V,

T

j

=25 °C

- 0.1 1 µA

V

DS

=100 V, V

GS

=0 V,

T

j

=125 °C

- 10 100

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- 10 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5 V, I

D

=20 A

- 16 20

mW

V

GS

=10 V, I

D

=20 A

- 13 15

Gate resistance

R

G

- 1.2 -

W

Transconductance

g

fs

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=20 A

21 42 - S

Value

Values

Rev. 2.2 page 2 2013-01-28

BSZ150N10LS3 G

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 1900 2500 pF

Output capacitance

C

oss

- 280 370

Reverse transfer capacitance

C

rss

- 12 -

Turn-on delay time

t

d(on)

- 8.1 - ns

Rise time

t

r

- 4.6 -

Turn-off delay time

t

d(off)

- 23.4 -

Fall time

t

f

- 3.9 -

Gate Charge Characteristics

5)

Gate to source charge

Q

gs

- 5.2 - nC

Gate charge at threshold

Q

g(th)

- 2.7 -

Gate to drain charge

Q

gd

- 4.1

Switching charge

Q

sw

- 7.7 -

Gate charge total

Q

g

- 26 35

Gate plateau voltage

V

plateau

- 2.7 - V

Output charge

Q

oss

V

DD

=50 V, V

GS

=0 V

- 28 37 nC

Reverse Diode

Diode continuous forward current

I

S

- - 40 A

Diode pulse current

I

S,pulse

- - 160

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=20 A,

T

j

=25 °C

- 0.9 1.2 V

Reverse recovery time

t

rr

- 53 - ns

Reverse recovery charge

Q

rr

- 84 - nC

5)

See figure 16 for gate charge parameter definition

V

R

=50 V, I

F

=10A,

di

F

/dt=100 A/µs

T

C

=25 °C

Values

V

GS

=0 V, V

DS

=50 V,

f=1 MHz

V

DD

=50 V, V

GS

=10 V,

I

D

=10 A, R

G,ext

=1.6 W

V

DD

=50 V, I

D

=10 A,

V

GS

=0 to 10 V

Rev. 2.2 page 3 2013-01-28

P1-P3 P4-P6 P7-P9

BSZ150N10LS3GATMA1

Mfr. #:

Buy BSZ150N10LS3GATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-Ch 100V 40A TSDSON-8

Lifecycle:

New from this manufacturer.

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BSZ150N10LS3GATMA1