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CD214B-B340LF

P1-P3P4-P4
CD214B-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
Features
■ RoHS compliant*
■ SMB package
■ Surface mount
■ High current capability
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB
real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 3 A with a
choice of repetitive peak reverse voltage of 20 V up to 60 V.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration
minimizes roll away.
Parameter Symbol
CD214B-
Unit
B320 B330 B340 B350 B360
Forward Voltage (Max.)
V
F
0.5 0.5 0.5 0.7 0.7 V
(I
f
= 3 A)
Typical Junction
C
T
250 pF
Capacitance*
Reverse Current (Max.)
I
R
0.5 mA
at Rated V
R
)
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
How To Order
CD 214B - B 3 30 LF
Common Code
Chip Diode
Package
• 214B = SMB/DO-214AA
Model
B = Schottky Barrier Series
Average Forward Current (I
o
) Code
3 = 3 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (V
R
) Code
30 = 30 V
40 = 40 V
60 = 60 V
Terminations
LF = 100 % Sn (RoHS Compliant)
Absolute Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol
CD214B-
Unit
B320 B330 B340 B350 B360
Repetitive Peak
V
RRM
20 30 40 50 60 V
Reverse Voltage
Reverse Voltage V
R
20 30 40 50 60 V
Maximum RMS Voltage V
RMS
14 21 28 35 42 V
Avg. Forward Current
I
O
3 A
Forward Current,
Surge Peak I
surge
100 A
(60 Hz, 1 cycle)
Typical Thermal
R
ΘJL
10 °C/W
Resistance**
Storage Temperature T
STG
-55 to +150 °C
Junction Temperature T
J
-55 to +125 °C
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
** Thermal resistance junction to lead.
*RoHS COMPLIANT
LEAD FREE
*RoHS COMPLIANT
VERSIONS
AVAILABLE
LEAD FREE
VERSIONS ARE
RoHS COMPLIANT*
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast
2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
This series is currently available but
not recommended for new designs.
The Model CD214B-B3xR Series
is the recommended replacement.
CD214B-B320 ...................................................................... 320B
CD214B-B330 ...................................................................... 330B
CD214B-B340 ...................................................................... 340B
CD214B-B350 ...................................................................... 350B
CD214B-B360 ...................................................................... 360B
CD214B-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
Product Dimensions Recommended Pad Layout
Physical Specifications
Typical Part Marking
Case ............................................................................ Molded plastic
Polarity .................................................... Indicated by cathode band
Weight ................................................... 0.003 ounces / 0.093 grams
Dimension SMB (DO-214AA)
A
4.06 - 4.57
(0.160 - 0.180)
B
3.30 - 3.94
(0.130 - 0.155)
C
1.96 - 2.21
(0.078 - 0.087)
D
0.15 - 0.31
(0.006 - 0.112)
E
5.21 - 5.59
(0.205 - 0.220)
F
0.05 - 0.20
(0.002 - 0.008)
G
2.01 - 2.62
(0.080 - 0.103)
H
0.76 - 1.52
(0.030 - 0.060)
A
C
B
G
F D
C
B
H
E
A
Dimension SMA (DO-214AC)
A
2.90
(0.114)
B
3.00
(0.118)
C
2.30
(0.091)
A
C
B
G
F D
C
B
H
E
A
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
DIMENSIONS:
MM
(INCHES)
DIMENSIONS:
MM
(INCHES)
CD214B-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves
Forward Current Derating Curve
Maximum Non-Repetitive Surge Current
3.50
2.00
0.01
0.1
1.0
10
1.50
1.00
0.50
0.00
25 50 75 100 125
150 175
Average Forward Current (Amps)
Lead Temperature (°C)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
100
0.001
020
40 60 80 100 120 140
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
10
1.0
0.1
.01
0 0.2
0.4 0.6 0.8 1.0
Instantaneous Forward Current (Amps)
Instantaneous Forward Voltage (Volts)
120
80
100
60
40
20
0
1
2510 20 50 100
Peak Forward Surge Current (Amps)
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
1000
100
0
0.1
4.0 10.01.0 100
Capacitance (pF)
Reverse Voltage (Volts)
Ta = 25 °C
Pulsewidth: 300 µs
B350 to B360
B320 to B340
F = 1 MHz
Ta = 25 °C
Ta = 100 °C
Ta = 25 °C
Ta = 125 °C
3.50
2.00
0.01
0.1
1.0
10
1.50
1.00
0.50
0.00
25 50 75 100 125
150 175
Average Forward Current (Amps)
Lead Temperature (°C)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
100
0.001
020
40 60 80 100 120 140
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
10
1.0
0.1
.01
0 0.2
0.4 0.6 0.8 1.0
Instantaneous Forward Current (Amps)
Instantaneous Forward Voltage (Volts)
120
80
100
60
40
20
0
1
2510 20 50 100
Peak Forward Surge Current (Amps)
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
1000
100
0
0.1
4.0 10.01.0 100
Capacitance (pF)
Reverse Voltage (Volts)
Ta = 25 °C
Pulsewidth: 300 µs
B350 to B360
B320 to B340
F = 1 MHz
Ta = 25 °C
Ta = 100 °C
Ta = 25 °C
Ta = 125 °C
Typical Forward Characteristics
Typical Junction Capacitance
3.50
2.00
0.01
0.1
1.0
10
1.50
1.00
0.50
0.00
25 50 75 100 125
150 175
Average Forward Current (Amps)
Lead Temperature (°C)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
100
0.001
020
40 60 80 100 120 140
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
10
1.0
0.1
.01
0 0.2
0.4 0.6 0.8 1.0
Instantaneous Forward Current (Amps)
Instantaneous Forward Voltage (Volts)
120
80
100
60
40
20
0
1
2510 20 50 100
Peak Forward Surge Current (Amps)
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
1000
100
0
0.1
4.0 10.01.0 100
Capacitance (pF)
Reverse Voltage (Volts)
Ta = 25 °C
Pulsewidth: 300 µs
B350 to B360
B320 to B340
F = 1 MHz
Ta = 25 °C
Ta = 100 °C
Ta = 25 °C
Ta = 125 °C
3.50
2.00
0.01
0.1
1.0
10
1.50
1.00
0.50
0.00
25 50 75 100 125
150 175
Average Forward Current (Amps)
Lead Temperature (°C)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
100
0.001
020
40 60 80 100 120 140
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
10
1.0
0.1
.01
0 0.2
0.4 0.6 0.8 1.0
Instantaneous Forward Current (Amps)
Instantaneous Forward Voltage (Volts)
120
80
100
60
40
20
0
1
2510 20 50 100
Peak Forward Surge Current (Amps)
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
1000
100
0
0.1
4.0 10.01.0 100
Capacitance (pF)
Reverse Voltage (Volts)
Ta = 25 °C
Pulsewidth: 300 µs
B350 to B360
B320 to B340
F = 1 MHz
Ta = 25 °C
Ta = 100 °C
Ta = 25 °C
Ta = 125 °C
Typical Reverse Characteristics
3.50
2.00
0.01
0.1
1.0
10
1.50
1.00
0.50
0.00
25 50 75 100 125
150 175
Average Forward Current (Amps)
Lead Temperature (°C)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
100
0.001
020
40 60 80 100 120 140
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
10
1.0
0.1
.01
0 0.2
0.4 0.6 0.8 1.0
Instantaneous Forward Current (Amps)
Instantaneous Forward Voltage (Volts)
120
80
100
60
40
20
0
1
2510 20 50 100
Peak Forward Surge Current (Amps)
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
1000
100
0
0.1
4.0 10.01.0 100
Capacitance (pF)
Reverse Voltage (Volts)
Ta = 25 °C
Pulsewidth: 300 µs
B350 to B360
B320 to B340
F = 1 MHz
Ta = 25 °C
Ta = 100 °C
Ta = 25 °C
Ta = 125 °C
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
P1-P3P4-P4

CD214B-B340LF

Mfr. #:
Buy CD214B-B340LF
Manufacturer:
Bourns
Description:
Schottky Diodes & Rectifiers 40volt RectifierChip
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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