© 2009 IXYS All rights reserved
4 - 4
20090812a
MII 300-12A4 MID 300-12A4
MDI 300-12A4
IXYS reserves the right to change limits, test conditions and dimensions.
0 100 200 300 400 500
0
20
40
60
80
0
40
80
120
160
0 100 200 300 400 500
0
20
40
60
80
0
200
400
600
800
0.00001 0.0001 0.001 0.01 0.1 1
0.00001
0.0001
0.001
0.01
0.1
1
0 4 8 12 16 20 24 28
0
10
20
30
40
50
0
400
800
1200
1600
2000
0 4 8 12 16 20 24 28
0
20
40
60
80
100
0
80
160
240
320
400
single pulse
V
CE
=600V
V
GE
=±15V
R
G
= 3.3Ω
T
J
= 125°C
300-12
V
CE
=600V
V
GE
=±15V
I
C
= 200A
T
J
= 125°C
0 200 400 600 800 1000 1200
0
100
200
300
400
500
R
G
= 3.3Ω
T
J
= 125°C
V
CEK
<V
CES
V
CE
=600V
V
GE
=±15V
R
G
= 3.3Ω
T
J
= 125°C
E
on
V
CE
=600V
V
GE
=±15V
I
C
= 200A
T
J
= 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
Fig.7 Typ.turnonenergyandswitching Fig.8 Typ.turnoffenergyandswitching
times versus collector current
Fig.9 Typ.turnonenergyandswitching
times versus gate resistor
Fig.10 Typ.turnoffenergyandswitching
times versus gate resistor
Fig.11 Reversebiasedsafeoperatingarea
RBSOA
Fig.12 Typ.transientthermalimpedance
