© 2009 IXYS All rights reserved
1 - 4
20090812a
MII 300-12A4 MID 300-12A4
MDI 300-12A4
IXYS reserves the right to change limits, test conditions and dimensions.
1
2
3
9
8
11
10
I
C25
= 330 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
Features
•NPTIGBTtechnology
•lowswitchinglosses
•switchingfrequencyupto30kHz
•squareRBSOA,nolatchup
•highshortcircuitcapability
•positivetemperaturecoefcientfor
easy parallelling
•MOSinput,voltagecontrolled
•ultrafastfreewheelingdiodes
•packagewithDCBceramicbaseplate
•isolationvoltage4800V
•ULregisteredE72873
Advantages
•spaceandweightsavings
•reducedprotectioncircuits
Applications
•ACandDCmotorcontrol
•ACservoandrobotdrives
•powersupplies
•weldinginverters
IGBTs T1 - T2
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 1200 V
V
GES
±
20 V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
330
220
A
A
I
CM
V
CEK
V
GE
=
±
15V;R
G
= 3.3 Ω;T
VJ
= 125°C
RBSOA Clampedinductiveload;L=100µH
400
V
CES
A
t
SC
(SCSOA)
V
CE
=V
CES
;V
GE
=
±
15V;R
G
= 3.3 Ω
T
VJ
=125°C;non-repetitive
10 µs
P
tot
T
C
= 25°C 1380 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C,unlessotherwisespecied)
min. typ. max.
V
CE(sat)
I
C
=200A;V
GE
=15V 2.2 2.7 V
V
GE(th)
I
C
=8mA;V
GE
=V
CE
4.5 6.5 V
I
CES
V
CE
=V
CES
;
V
GE
=0V T
VJ
= 25°C
T
VJ
= 125°C 20
13 mA
mA
I
GES
V
CE
=0V;V
GE
=
±
20V ±800 nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Inductiveload T
VJ
= 125°C
V
CE
=600V;I
C
= 200 A
V
GE
=
±
15V;R
G
= 3.3 Ω
100
60
600
90
32
29
ns
ns
ns
ns
mJ
mJ
C
ies
C
oes
C
res
V
CE
=25V;V
GE
=0V;f=1MHz
13
2
1
nF
nF
nF
R
thJC
R
thJH
(perIGBT)
withheatsinkcompound 0.18
0.09 K/W
K/W
9
8
2
3
1
T1
11
10
T2
D1
D2
MII 300-12A4
9
8
2
3
1
T1
D11
D2
MDI 300-12A4
2
3
1
11
10
T2
D1
D12
MID 300-12A4