CY7C1041BNL-20VXC

256K x 16 Static RAM
CY7C1041BN
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-06496 Rev. *A Revised August 31, 2006
Features
Temperature Ranges
Commercial: 0°C to 70°C
Industrial: –40°C to 85°C
Automotive-A: –40°C to 85°C
•High speed
—t
AA
= 15 ns
Low active power
1540 mW (max.)
Low CMOS standby power (L version)
2.75 mW (max.)
2.0V Data Retention (400 µW at 2.0V retention)
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE
and OE features
Available in Pb-free and non Pb-free 44-pin TSOP II and
molded 44-pin (400-Mil) SOJ packages
Functional Description
The CY7C1041BN is a high-performance CMOS static RAM
organized as 262,144 words by 16 bits.
Writing to the device is accomplished by taking Chip Enable
(CE
) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE
) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through A
17
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
8
through I/O
15
) is written into the location
specified on the address pins (A
0
through A
17
).
Reading from the device is accomplished by taking Chip
Enable (CE
) and Output Enable (OE) LOW while forcing the
Write Enable (WE
) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
0
to I/O
7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
8
to I/O
15
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
0
through I/O
15
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1041BN is available in a standard 44-pin
400-mil-wide body width SOJ and 44-pin TSOP II package
with center power and ground (revolutionary) pinout.
14
15
Logic Block Diagram Pin Configuration
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
ROW DECODER
SENSE AMPS
INPUT BUFFER
256K x 16
ARRAY
A
0
A
11
A
13
A
12
A
A
A
16
A
17
A
9
A
10
I/O
0
–I/O
7
OE
I/O
8
–I/O
15
CE
WE
BLE
BHE
WE
1
2
3
4
5
6
7
8
9
10
11
14
31
32
36
35
34
33
37
40
39
38
Top View
SOJ
12
13
41
44
43
42
16
15
29
30
V
CC
A
5
A
6
A
7
A
8
A
0
A
1
OE
V
SS
A
17
I/O
15
A
2
CE
I/O
2
I/O
0
I/O
1
BHE
A
3
A
4
18
17
20
19
I/O
3
27
28
25
26
22
21
23
24
V
SS
I/O
6
I/O
4
I/O
5
I/O
7
A
16
A
15
BLE
V
CC
I/O
14
I/O
13
I/O
12
I/O
11
I/O
10
I/O
9
I/O
8
A
14
A
13
A
12
A
11
A
9
A
10
NC
TSOP II
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CY7C1041BN
Document #: 001-06496 Rev. *A Page 2 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[1]
.... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[1]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Selection Guide
-15 -20 Unit
Maximum Access Time 15 20 ns
Maximum Operating Current Commercial 190 170 mA
Industrial 210 190
Automotive-A 190
Maximum CMOS Standby Current Commercial 3 3 mA
Commercial L0.5 0.5
Industrial 6 6
Automotive-A 6
Operating Range
Range
Ambient
Temperature
[2]
V
CC
Commercial 0°C to +70°C 5V ± 0.5
Industrial –40°C to +85°C
Automotive-A –40°C to +85°C
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
-15 -20
Min. Max. Min. Max. Unit
V
OH
Output HIGH Voltage V
CC
= Min., I
OH
= –4.0 mA 2.4 2.4 V
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA 0.4 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+ 0.5 2.2 V
CC
+ 0.5 V
V
IL
Input LOW Voltage
[1]
–0.5 0.8 –0.5 0.8 V
I
IX
Input Load Current GND < V
I
< V
CC
–1 +1 –1 +1 mA
I
OZ
Output Leakage Current GND < V
OUT
< V
CC
, Output Disabled –1 +1 –1 +1 mA
I
CC
V
CC
Operating Supply
Current
V
CC
= Max.,
f = f
MAX
= 1/t
RC
Comm’l 190 170 mA
Ind’l 210 190 mA
Auto-A 190 mA
I
SB1
Automatic CE
Power-Down
Current—TTL Inputs
Max. V
CC
, CE > V
IH,
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
40 40 mA
I
SB2
Automatic CE
Power-Down Current
CMOS Inputs
Max. V
CC
, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
Comm’l 3 3 mA
Comm’l L 0.5 0.5 mA
Ind’l 6 6 mA
Auto-A 6 mA
Notes:
1. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
2. T
A
is the case temperature.
3. Tested initially and after any design or process changes that may affect these parameters.
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CY7C1041BN
Document #: 001-06496 Rev. *A Page 3 of 10
Capacitance
[3]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
8pF
C
OUT
I/O Capacitance 8 pF
AC Test Loads and Waveforms
Switching Characteristics
[4]
Over the Operating Range
-15 -20
Parameter Description Min. Max. Min. Max. Unit
Read Cycle
t
power
V
CC
(typical) to the First Access
[5]
11µs
t
RC
Read Cycle Time 15 20 ns
t
AA
Address to Data Valid 15 20 ns
t
OHA
Data Hold from Address Change 3 3 ns
t
ACE
CE LOW to Data Valid 15 20 ns
t
DOE
OE LOW to Data Valid 7 8 ns
t
LZOE
OE LOW to Low Z 0 0 ns
t
HZOE
OE HIGH to High Z
[6, 7]
78ns
t
LZCE
CE LOW to Low Z
[7]
33ns
t
HZCE
CE HIGH to High Z
[6, 7]
78ns
t
PU
CE LOW to Power-Up 0 0 ns
t
PD
CE HIGH to Power-Down 15 20 ns
t
DBE
Byte Enable to Data Valid 7 8 ns
t
LZBE
Byte Enable to Low Z 0 0 ns
t
HZBE
Byte Disable to High Z 7 8 ns
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
5. This part has a voltage regulator which steps down the voltage from 5V to 3.3V internally. t
power
time has to be provided initially before a read/write operation is
started.
6. t
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
7. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
3 ns 3 ns
OUTPUT
R1 481
R1 481
R2
255
R2
255
167
Equivalent to: VENIN EQUIVALENT
1.73V
THÉ
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CY7C1041BNL-20VXC

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 256K x 16 COM ASYNC SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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