VS-30ETH06-M3
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Vishay Semiconductors
Revision: 23-Nov-17
1
Document Number: 96182
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Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Reduced Q
rr
and soft recovery
• 175 °C T
J
maximum
• For PFC CRM/CCM operation
• Low forward voltage drop
• Low leakage current
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
R
600 V
V
F
at I
F
1.34 V
t
rr
(typ.) 23 ns
T
J
max. 175 °C
Package 2L TO-220AC
Circuit configuration Single
Anode
1
3
Cathode
Base
cathode
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 103 °C 30
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 200
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 30 A - 2.0 2.6
I
F
= 30 A, T
J
= 150 °C - 1.34 1.75
Reverse leakage current I
R
V
R
= V
R
rated - 0.3 50
μA
T
J
= 150 °C, V
R
= V
R
rated - 60 500
Junction capacitance C
T
V
R
= 600 V - 33 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH