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BYW51/F/G/FP/R-200
4/9
1E-3 1E-2 1E-1 1E+0
0.1
1.0
t(s)
K=[Zth(j-c)/Rth(j-c)]
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ
=tp/T
tp
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration (D
2
PAK,
TO-220AB).
1E-2 1E-1 1E+0 1E+1
0.1
1.0
t(s)
K=[Zth(j-c)/Rth(j-c)]
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ
=tp/T
tp
Fig. 5-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125°C
Tj=25°C
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
1 10 100 200
10
20
50
100
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1E-3 1E-2 1E-1 1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=25°C
Tc=100°C
Tc=75°C
IM
t
δ=0.5
Fig. 4-3: Non repetitive surge peak forward current
versus overload duration (TO-220FPAB).
10 20 50 100 200 500
10
20
50
100
200
500
dIF/dt(A/µs)
Qrr(nC)
IF=IF(av)
90% confidence
Tj=125°C
Fig. 8: Reverse recovery charges versus dI
F
/dt
(per diode).
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