IPC100N04S5L1R9ATMA1

P1-P3 P4-P6 P7-P9

IPC100N04S5L-1R9

OptiMOS

™

-5 Power-Transistor

Features

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Logic Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

1)

I

D

T

C

=25°C, V

GS

=10V

100 A

T

C

=100°C, V

GS

=10V

2)

100

Pulsed drain current

2)

I

D,pulse

T

C

=25°C

400

Avalanche energy, single pulse

2)

E

AS

I

D

=50A

130 mJ

Avalanche current, single pulse

I

AS

-

100 A

Gate source voltage

V

GS

- ±16 V

Power dissipation

P

tot

T

C

=25°C

100 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

Value

V

DS

40

V

R

DS(on),max

1.9

mW

I

D

100

A

Product Summary

Type

Package

Marking

IPC100N04S5L-1R9

PG-TDSON-8-34

5N04L1R9

1

1

PG-TDSON-8-34

Rev. 1.2 page 1 2016-12-06

IPC100N04S5L-1R9

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 1.5 K/W

Thermal resistance, junction -

ambient

R

thJA

6 cm

2

cooling area

3)

- - 50

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

40 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=50µA

1.2 1.6 2.0

Zero gate voltage drain current

I

DSS

V

DS

=40V, V

GS

=0V,

T

j

=25°C

- - 1 µA

V

DS

=40V, V

GS

=0V,

T

j

=125°C

2)

- - 100

Gate-source leakage current

I

GSS

V

GS

=16V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5V, I

D

=50A

- 1.8 2.5

mW

V

GS

=10V, I

D

=50A

- 1.4 1.9

Values

Rev. 1.2 page 2 2016-12-06

IPC100N04S5L-1R9

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

2)

Input capacitance

C

iss

- 3240 4310 pF

Output capacitance

C

oss

- 730 970

Reverse transfer capacitance

C

rss

- 48 72

Turn-on delay time

t

d(on)

- 5 - ns

Rise time

t

r

- 5 -

Turn-off delay time

t

d(off)

- 29 -

Fall time

t

f

- 22 -

Gate Charge Characteristics

2)

Gate to source charge

Q

gs

- 9 12 nC

Gate to drain charge

Q

gd

- 13 19

Gate charge total

Q

g

- 61 81

Gate plateau voltage

V

plateau

- 2.7 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 100 A

Diode pulse current

2)

I

S,pulse

- - 400

Diode forward voltage

V

SD

V

GS

=0V, I

F

=50A,

T

j

=25°C

- 0.8 1.1 V

Reverse recovery time

2)

t

rr

V

R

=20V, I

F

=100A,

di

F

/dt=100A/µs

- 51 - ns

Reverse recovery charge

2)

Q

rr

- 54 - nC

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by package; with an R

thJC

= 1.5 K/W the chip is able to carry 160A at 25°C.

T

C

=25°C

2)

The parameter is not subject to production test- verified by design/characterization.

Values

V

GS

=0V, V

DS

=25V,

f=1MHz

V

DD

=20V, V

GS

=10V,

I

D

=100A, R

G

=3.5W

V

DD

=32V, I

D

=100A,

V

GS

=0 to 10V

Rev. 1.2 page 3 2016-12-06

P1-P3 P4-P6 P7-P9

IPC100N04S5L1R9ATMA1

Mfr. #:

Buy IPC100N04S5L1R9ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET

Lifecycle:

New from this manufacturer.

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IPC100N04S5L1R9ATMA1