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SIA519EDJ-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
Vishay Siliconix
SiA519EDJ
www.vishay.com
4
Document Number: 65176
S13-1890-Rev. D, 02-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
0
10
20
30
40
50
0369121518
I
GSS
at 25 °C
- Gate Current (mA)
I
GSS
V
GS
- Gate-to-Source Voltage (V)
0
3
6
9
12
15
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=5V thru 3 V
V
GS
=2V
V
GS
=1.5V
V
GS
=2.5V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0 3 6 9 12 15
V
GS
=2.5V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
-DrainCurrent (A)
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
- Gate Current (A)I
GSS
V
GS
- Gate-to-Source Voltage (V)
0 3 6 9 12 15 18
10
-10
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
T
J
= 150 °C
T
J
= 25 °C
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
100
200
300
400
500
02468 10 12 14 16 18 20
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
Vishay Siliconix
SiA519EDJ
Document Number: 65176
S13-1890-Rev. D, 02-Sep-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
10
02468
V
DS
=16V
V
DS
=5V
I
D
=5.5A
V
DS
=10V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)
I
S
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
I
D
=4.2A
V
GS
=4.5V,2.5V
T
J
-Junction Temperature (°C)
(Normalized)- On-ResistanceR
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
012345
I
D
= 2 A; T
J
= 25 °C
I
D
= 4.2 A; T
J
= 25 °C
I
D
=4.2A;T
J
= 125 °C
I
D
=2A;T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
1000
100
1
0.001 0.01 0.1 10
Power (W)
Pulse (s)
20
10
5
15
0
Vishay Siliconix
SiA519EDJ
www.vishay.com
6
Document Number: 65176
S13-1890-Rev. D, 02-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
100 ms
Limited byR
DS(on)
*
BVDSS Limited
1ms
100 µs
10 ms
1s,10s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
-DrainCurrent (A)
I
D
Current Derating*
0
2
4
6
8
10
12
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
-DrainCurrent (A)
Power Derating
P1-P3P4-P6P7-P9P10-P12P13-P14

SIA519EDJ-T1-GE3

Mfr. #:
Buy SIA519EDJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
Lifecycle:
New from this manufacturer.
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