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STPS3060CW

P1-P3P4-P4
1/4
STPS3060CW
October 2003 - Ed: 1A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
®
High voltage dual Schottky rectifier suited for
switchmode power supplies and other power
converters.
Packaged in TO-247, this device is intended for
use in medium voltage operation, and particularly,
in high frequency circuitries where low switching
losses and low noise are required.
DESCRIPTION
■
Negligible switching losses
■
Low forward voltage drop
■
Low capacitance
■
High reverse avalanche surge capability.
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
60 V
I
F(RMS)
RMS forward current Per diode
30 A
I
F(AV)
Average forward current δ = 0.5 Tc = 130°C Per diode
Per device
15
30
A
I
FSM
Surge non repetitive forward current tp = 10 ms
Sinusoidal
Per diode
200 A
I
RRM
Repetitive peak reverse current tp=2 µs
F=1kHz
Per diode
1A
I
RSM
Non repetitive peak reverse current tp = 100µs Per diode
1A
T
stg
Storage temperature range
- 65 to + 150 °C
Tj
Maximum operating junction temperature *
150 °C
dV/dt
Critical rate of rise of reverse voltage
1000 V/µs
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2x15A
V
RRM
60 V
Tj (max) 150°C
V
F
(max) 0.75 V
MAIN PRODUCT CHARACTERISTICS
*:
dPtot
dTj Rth j a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
A1
K
A2
A1
K
A2
TO-247
STPS3060CW
STPS3060CW
2/4
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage
current
Tj = 25°C V
R
=V
RRM
150 µA
Tj = 125°C
100 mA
V
F
*
Forward voltage drop Tj = 25°CI
F
=15A
0.85 V
Tj = 125°C I
F
=15A
0.65 0.75
Tj=25°CI
F
=30A
1.05
Tj = 125°C I
F
=30A
0.80 0.90
Pulse test: * tp = 5ms, δ <2%
**tp = 380µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.6xI
F(AV)
+ 0.01 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Total
1.5
0.8
°C/W
R
th(c)
Coupling 0.1 °C/W
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
P (W)
F(AV)
0
2
4
6
8
10
12
14
16
02468101214161820
I (A)
F(AV)
T
δ
=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 1
δ = 0.5
Fig. 1: Conduction losses versus average current
(per diode).
I (A)
F(AV)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
0 25 50 75 100 125 150
T (°C)
amb
T
δ
=tp/T
tp
R=R
th(j-a) th(j-I)
R =15°C/W
th(j-a)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
STPS3060CW
3/4
0
20
40
60
80
100
120
140
160
1.E-03 1.E-02 1.E-01 1.E+00
I (A)
M
IM
t
δ=0.5
t(s)
T =50°C
C
T =75°C
C
T =110°C
C
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
5 1015202530354045505560
I (mA)
R
V (V)
R
T=125°C
j
T=100°C
j
T=50°C
j
T=75°C
j
Fig. 5: Reverse leakage currrent versus reverse
voltage applied (typical values, per diode).
100
1000
10000
1 10 100
C(pF)
V (V)
R
F=1MHz
V =30mV
T=25°C
OSC RMS
j
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I (A)
FM
V (V)
FM
T=125°C
j
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
P1-P3P4-P4

STPS3060CW

Mfr. #:
Buy STPS3060CW
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 2X15 Amp 60 Volt
Lifecycle:
New from this manufacturer.
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