IXFN170N30P Datasheet IXFN170N30P | P1-P3

DS100001A(9/15)

Polar

TM

HiPerFET

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFN170N30P

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 300 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8mA 2.5 4.5 V

I

GSS

V

GS

= 20V, V

DS

= 0V 200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25A

T

J

= 125C 1.5 mA

R

DS(on)

V

GS

= 10V, I

D

= 85A, Note 1 18 m

V

DSS

= 300V

I

D25

= 138A

R

DS(on)



 18m





t

rr



 200ns

S

G

S

D

miniBLOC, SOT-227 B

E153432

G = Gate D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 300 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 300 V

V

GSS

Continuous 20 V

V

GSM

Transient  30 V

I

D25

T

C

= 25C 138 A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

500 A

I

A

T

C

= 25C85A

E

AS

T

C

= 25C5J

dv/dt I

S

 I

DM

, V

DD

 V

DSS

,T

J

 150C 20 V/ns

P

D

T

C

= 25C 890 W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

V

ISOL

50/60 Hz, RMS t = 1 minute 2500 V~

I

ISOL

 1mA t = 1 second 3000 V~

M

d

Mounting Torque 1.5/13 Nm/lb.in

Terminal Connection Torque 1.3/11.5 Nm/lb.in

Weight 30 g

Features

• International Standard Package

•

miniBLOC, with Aluminium Nitride

Isolation

• Isolation Voltage 2500 V~

• High Current Handling Capability

• Fast Intrinsic Diode

• Avalanche Rated

• Low R

DS(on)

Advantages

• Low Gate Charge Results in Simple

Drive Requirement

• Improved Gate, Avalanche and

Dynamic dv/dt Ruggedness

• High Power Density

Applications

• DC-DC Coverters

• Battery Chargers

• Switched-Mode and Resonant-Mode

Power Supplies

• DC Choppers

• AC and DC Motor Control

• Uninterrupted Power Supplies

• High Speed Power Switching

Applications

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN170N30P

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 57 95 S

C

iss

20 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 2450 pF

C

rss

27 pF

t

d(on)

41 ns

t

r

29 ns

t

d(off)

79 ns

t

f

16 ns

Q

g(on)

258 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 85A 82 nC

Q

gd

78 nC

R

thJC

0.14C/W

R

thCS

0.05 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 170 A

I

SM

Repetitive, Pulse Width Limited by T

JM

500 A

V

SD

I

F

= 85A, V

GS

= 0V, Note 1 1.3 V

t

rr

200 ns

Q

RM

1.85 C

I

RM

21 A

Note 1: Pulse test, t 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 85A

R

G

= 1 (External)

I

F

= 85A, -di/dt = 150A/μs

V

R

= 100V

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

IXFN170N30P

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

180

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 5 10 15 20

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

20

40

60

80

100

120

140

160

180

01234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

5V

7V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 85A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 170A

I

D

= 85A

Fig. 5. R

DS(on)

Normalized to I

D

= 85A Value vs.

Drain Current

0.8

1.2

1.6

2.0

2.4

2.8

0 50 100 150 200 250 300

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

20

40

60

80

100

120

140

160

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFN170N30P

IXFN170N30P

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