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VS-1EFH02W-M3-18

P1-P3P4-P6
VS-1EFH02W-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Nov-14
1
Document Number: 94876
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 1 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• Low forward voltage drop
• Low leakage current
• Specific for output and snubber operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
PRODUCT SUMMARY
Package DO-219AB (SMF)
I
F(AV)
1 A
V
R
200 V
V
F
at I
F
0.93 V
t
rr
25 ns
T
J
max. 175 °C
Diode variation Single die
Cathode Anode
SMF (DO-219AB)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current I
F(AV)
T
C
= 160 °C
(1)
1
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 40
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 1 A - 0.87 0.93
I
F
= 1 A, T
J
= 125 °C - 0.74 0.8
Reverse leakage current I
R
V
R
= V
R
rated - - 2
μA
T
J
= 125 °C, V
R
= V
R
rated - 1 8
Junction capacitance C
T
V
R
= 200 V - 5 - pF
VS-1EFH02W-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Nov-14
2
Document Number: 94876
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 26 -
ns
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A - - 25
T
J
= 25 °C
I
F
= 1 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-16-
T
J
= 125 °C - 23 -
Peak recovery current I
RRM
T
J
= 25 °C - 1.6 -
A
T
J
= 125 °C - 2.5 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 13 -
nC
T
J
= 125 °C - 30 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case
R
thJC
Device mounted on PCB with
8 mm x 16 mm soldering lands
--17
°C/W
Thermal resistance,
junction to ambient
R
thJA
Device mounted on PCB with
2 mm x 3.5 mm soldering lands
- - 140
Approximate weight
0.015 g
0.0005 oz.
Marking device Case style SMF (DO-219AB) DH
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 175 °C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (μA)
0.0001
0.001
0.01
0.1
1
10
100
50 100 150 200
25 °C
125 °C
150 °C
175 °C
VS-1EFH02W-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Nov-14
3
Document Number: 94876
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
V
R
-
Reverse Voltage (V)
C
T
-
Junction Capacitance (pF)
1
10
100
0 50 100 150 200
150
155
160
165
170
175
180
0 0.2 0.4 0.6 0.8 1 1.2
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
80 % rated V
R
applied
See note
(1)
DC
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0.3
0.6
0.9
1.2
0 0.3 0.6 0.9 1.2 1.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
5
10
15
20
25
30
35
100 1000
t
rr
(ns)
dI
F
/dt (A/μs)
125 °C
25 °C
5
10
15
20
25
30
35
40
45
100 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
125 °C
25 °C
P1-P3P4-P6

VS-1EFH02W-M3-18

Mfr. #:
Buy VS-1EFH02W-M3-18
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers FRED - SMF-e3
Lifecycle:
New from this manufacturer.
Delivery:
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