July 2007 Rev 5 1/7
7
STTH806DTI
Tandem 600 V hyperfast boost diode
Features and benefits
■ Especially suited as boost diode in continuous
mode power factor correctors and hard
switching conditions
■ Designed for high di/dt operation. Hyperfast
recovery current to compete with SiC devices.
Allows downsizing of mosfet and heatsinks
■ Internal ceramic insulated devices with equal
thermal conditions for both 300 V diodes
■ Insulation (2500 V
RMS
) allows placement on
same heatsink as mosfet and flexible
heatsinking on common or separate heatsink
■ Static and dynamic equilibrium of internal
diodes are warranted by design
■ Package Capacitance: C = 7 pF
Description
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300 V dice
in series. TURBOSWITCH “H” family drastically
cuts losses in the associated MOSFET when run
at high dI
F
/dt.
Table 1. Main product characteristics
I
F(AV)
8 A
V
RRM
600 V
T
j (max)
150° C
V
F (max)
2.24 V
I
RM (typ.)
4 A
t
rr (typ.)
13 ns
Table 2. Order codes
Part number Marking
STTH806DTI STTH806DTI
1
2
12
Insulated TO-220AC
Table 3. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
RMS forward voltage 14 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 180 A
T
stg
Storage temperature range -65 to + 150 ° C
T
j
Maximum operating junction temperature 150 ° C
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