IRF9Z34S, SiHF9Z34S
www.vishay.com
Vishay Siliconix
S16-0754-Rev. E, 02-May-16
1
Document Number: 91093
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Advanced process technology
• Surface mount (IRF9Z34S, SiHF9Z34S)
• 175 °C operating temperature
• Fast switching
•P-channel
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 1.3 mH, R
g
= 25 , I
AS
= - 18 A (see fig. 12).
c. I
SD
- 18 A, dI/dt 170 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z34, SiHF9Z34 data and test conditions.
PRODUCT SUMMARY
V
DS
(V) -60
R
DS(on)
()V
GS
= -10 V 0.14
Q
g
max. (nC) 34
Q
gs
(nC) 9.9
Q
gd
(nC) 16
Configuration Single
S
G
D
P-Channel MOSFET
Available
Available
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9Z34S-GE3 SiHF9Z34STRL-GE3
a
SiHF9Z34STRR-GE3
a
Lead (Pb)-free IRF9Z34SPbF IRF9Z34STRLPbF
a
IRF9Z34STRRPbF
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at -10 V
T
C
= 25 °C
I
D
-18
AT
C
= 100 °C -13
Pulsed Drain Current
a, e
I
DM
-72
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
370 mJ
Avalanche Current
a
I
AR
-18 A
Repetitive Avalanche Energy
a
E
AR
8.8 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
88
W
T
A
= 25 °C 3.7
Peak Diode Recovery dV/dt
c, e
dV/dt -4.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak temperature)
d
for 10 s 300