TIP34C

P1-P3 P4-P6 P7-P7

February 2008 Rev 3 1/7

7

TIP33C

TIP34C

Complementary power transistors

Features

■ Low collector-emitter saturation voltage

■ Complementary NPN - PNP transistors

Applications

■ General purpose

Description

The devices are manufactured in epitaxial-base

planar technology and are suitable for power

linear and switching applications.

.

Figure 1. Internal schematic diagrams

Table 1. Device summary

TO-247

1

2

3

Order code Marking Package Packaging

TIP33C TIP33C

TO-247 Tube

TIP34C TIP34C

ww w.st.com

Obsolete Product(s) - Obsolete Product(s)

Electrical ratings TIP34C

2/7

1 Electrical ratings

For PNP type voltage and current values are negative.

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

NPN TIP33C

PNP TIP34C

V

CBO

Collector-base voltage (I

E

= 0) 140 V

V

CES

Collector-emitter voltage (V

BE

= 0) 140 V

V

CEO

Collector-emitter voltage (I

B

= 0) 100 V

V

EBO

Emitter-base voltage (I

C

= 0) 5 V

I

C

Collector current 10 A

I

CM

Collector peak current (t

P

< 5 ms) 15 A

I

B

Base current 3 A

P

TOT

Total dissipation at T

case

= 25 °C 80 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

Thermal resistance junction-case max 1.56 °C/W

Obsolete Product(s) - Obsolete Product(s)

TIP34C Electrical characteristics

3/7

2 Electrical characteristics

(T

case

= 25 °C; unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CES

Collector cut-off current

(V

BE

= 0)

V

CE

= 140 V

0.4 mA

I

CEO

Collector cut-off current

(I

B

= 0)

V

CE

= 60 V

0.7 mA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 5 V

1mA

V

CEO(sus)

(1)

1. Pulsed duration = 300 ms, duty cycle ≥ 1.5%.

Collector-emitter

sustaining voltage

(I

B

= 0)

I

C

= 30 mA

100 V

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 3 A __ I

B

= 0.3 A

I

C

= 10 A _ I

B

= 2.5 A

1

4

V

V

V

BE(on)

(1)

Base-emitter voltage

I

C

= 3 A ___ V

CE

= 4 V

I

C

= 10 A __ V

CE

= 4 V

1.6

3

V

V

h

FE

(1)

DC current gain

I

C

= 1 A___ V

CE

= 4 V

I

C

= 3 A ___ V

CE

= 4 V

40

20

100

h

fe

Small signal current gain

I

C

= 0.5 A_ V

CE

= 10 V

f = 1 kHz

3

f

T

Transition frequency

I

C

= 0.5 A_ V

CE

= 10 V

f = 1 MHz

3MHz

t

on

t

s

t

f

Resistive load

Turn-on time

Storage time

Fall time

V

CC

= 30 V I

C

= 6 A

I

B1

= -I

B2

= 0.6 A V

BB

= -6 V

tp = 20 µs

0.6

0.4

1

µs

µs

µs

Obsolete Product(s) - Obsolete Product(s)

P1-P3 P4-P6 P7-P7

TIP34C

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Silicon Complementary High Power Transistors

Lifecycle:

New from this manufacturer.

Delivery:

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TIP34C