Characteristics ACST1235-8FP
4/13 DocID026033 Rev 1
Figure 6. On-state characteristics
(maximum values)
Figure 7. Surge peak on-state current versus
number of cycles
I(A)
TM
1
10
100
012345
V(V)
TM
T
j
max :
V
to
= 0.9 V
R
d
= 38 mΩ
T
j
= 25
°C
T
j
= 150
°
C
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
2.5
I
H
,I
L
[T
j
] / I
H
,I
L
[T
j
= 25 °C]I
H
,I
L
[T
j
] / I
H
,I
L
[T
j
= 25 °C]
I
H
I
L
T
j
(°C)
Figure 8. Non repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t
Figure 9. Relative variation of gate trigger
current and gate trigger voltage versus junction
temperature (typical values)
I (A), I t (A s)
TSM
2
2
1
10
100
1000
0.01 0.10 1.00 10.00
dI/dt limitation: 100 A/μs
I
TSM
I²t
t(ms)
p
T
j
initial = 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125 150
I
GT
,V
GT
[T
j
] / I
GT
,V
GT
[T
j
= 25 °C]
T
j
(°C)
I
GT
Q3
I
GT
Q1- Q2
V
GT
Q1- Q2 - Q3
Figure 10. Relative variation of holding current
and latching current versus junction
temperature (typical values)
Figure 11. Relative variation of critical rate of
decrease of main current (dI/dt)c versus
reapplied (dV/dt)c
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
I
H
I
L
T
j
(°C)
2.5
I
H
,I
L
[T
j
] / I
H
,I
L
[T
j
= 25 °C]I
H
,I
L
[T
j
] / I
H
,I
L
[T
j
= 25 °C]
0
1
2
3
0.1 1.0 10.0 100.0
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
T
j
=150 °C
(dV/dt)c (V/µs)
