CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document #: 38-05615 Rev. *C Page 19 of 25
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied...........................................––55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +2.9V
Supply Voltage on V
DDQ
Relative to GND ......–0.5V to +V
DD
DC Voltage Applied to Outputs
in High-Z State .................................... –0.5V to V
DDQ
+ 0.3V
DC Input Voltage
[18]
...............................–0.5V to V
DD
+ 0.3V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Ambient
Temperature (T
A
)V
DD
[19]
V
DDQ
[19]
Com’l 0°C to +70°C 1.8 ± 0.1V 1.4V to V
DD
Ind’l –40°C to +85°C
Electrical Characteristics Over the Operating Range
[15, 19]
DC Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions Min. Typ. Max. Unit
V
DD
Power Supply Voltage 1.7 1.8 1.9 V
V
DDQ
I/O Supply Voltage 1.4 1.5 V
DD
V
V
OH
Output HIGH Voltage Note 16 V
DDQ
/2 – 0.12 V
DDQ
/2 + 0.12 V
V
OL
Output LOW Voltage Note 17 V
DDQ
/2 – 0.12 V
DDQ
/2 + 0.12 V
V
OH(LOW)
Output HIGH Voltage I
OH
=0.1 mA, Nominal Impedance V
DDQ
– 0.2 V
DDQ
V
V
OL(LOW)
Output LOW Voltage I
OL
= 0.1 mA, Nominal Impedance V
SS
0.2 V
V
IH
Input HIGH Voltage
[18]
V
REF
+ 0.1 V
DDQ
+0.3 V
V
IL
Input LOW Voltage
[18]
–0.3 V
REF
– 0.1 V
I
X
Input Leakage Current GND V
I
V
DDQ
55µA
I
OZ
Output Leakage Current GND V
I
V
DDQ,
Output Disabled 55µA
V
REF
Input Reference Voltage
[20]
Typical Value = 0.75V 0.68 0.75 0.95 V
I
DD
V
DD
Operating Supply V
DD
= Max., I
OUT
= 0
mA, f = f
MAX
= 1/t
CYC
167 MHz 740 mA
200 MHz 870 mA
250 MHz 1065 mA
I
SB1
Automatic Power-down
Current
Max. V
DD
, Both Ports
Deselected, V
IN
V
IH
or V
IN
V
IL
, f = f
MAX
=
1/t
CYC,
Inputs Static
167 MHz 270 mA
200 MHz 300 mA
250 MHz 350 mA
AC Input Requirements
Over the Operating Range
Parameter Description Test Conditions Min. Typ. Max. Unit
V
IH
Input High (Logic 1) Voltage V
REF
+ 0.2 V
V
IL
Input Low (Logic 0) Voltage V
REF
– 0.2 V
Capacitance
[21]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
DD
= 1.8V
V
DDQ
= 1.5V
5pF
C
CLK
Clock Input Capacitance 4 pF
C
O
Output Capacitance 5 pF
Notes:
15.All voltage referenced to Ground.
16.Output are impedance controlled. I
OH
= –(V
DDQ
/2)/(RQ/5) for values of 175 <= RQ <= 350s.
17.Output are impedance controlled. I
OL
= (V
DDQ
/2)/(RQ/5) for values of 175 <= RQ <= 350.
18.Overshoot: V
IH
(AC) < V
DDQ
+0.85V (Pulse width less than t
CYC
/2), Undershoot: V
IL
(AC) > –1.5V (Pulse width less than t
CYC
/2).
19.Power-up: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
20. V
REF
(Min.) = 0.68V or 0.46V
DDQ
, whichever is larger, V
REF
(Max.) = 0.95V or 0.54V
DDQ
, whichever is smaller.
21.Tested initially and after any design or process change that may affect these parameters.
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CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document #: 38-05615 Rev. *C Page 20 of 25
Thermal Resistance
[21]
Parameter Description Test Conditions
165 FBGA
Package Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
17.2 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
3.2 °C/W
AC Test Loads and Waveforms
Note:
22.Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250, V
DDQ
= 1.5V, input
pulse levels of 0.25V to 1.25V, and output loading of the specified I
OL
/I
OH
and load capacitance shown in (a) of AC Test Loads.
1.25V
0.25V
R = 50
5pF
ALL INPUT PULSES
Device
R
L
= 50
Z
0
= 50
V
REF
= 0.75V
V
REF
= 0.75V
[22]
0.75V
Under
Test
0.75V
Device
Under
Tes t
OUTPUT
0.75V
V
REF
V
REF
OUTPUT
ZQ
ZQ
(a)
Slew Rate = 2 V/ns
RQ =
250
(b)
RQ =
250
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CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document #: 38-05615 Rev. *C Page 21 of 25
Switching Characteristics Over the Operating Range
[22, 23]
Cypress
Parameter
Consortium
Parameter Description
250 MHz 200 MHz 167 MHz
UnitMin. Max. Min. Max. Min. Max.
t
POWER
V
DD
(Typical) to the first Access
[26]
111ms
t
CYC
t
KHKH
K Clock and C Clock Cycle Time 4.0 6.3 5.0 7.9 6.0 8.4 ns
t
KH
t
KHKL
Input Clock (K/K and C/C) HIGH 1.6 2.0 2.4 ns
t
KL
t
KLKH
Input Clock (K/K and C/C) LOW 1.6 2.0 2.4 ns
t
KHKH
t
KHKH
K Clock Rise to K Clock Rise and C to C Rise
(rising edge to rising edge)
1.8 2.2 2.7 ns
t
KHCH
t
KHCH
K/K Clock Rise to C/C Clock Rise (rising edge
to rising edge)
0.0 1.8 0.0 2.2 0.0 2.7 ns
Set-up Times
t
SA
t
AVKH
Address Set-up to K Clock Rise 0.35 0.4 0.5 ns
t
SC
t
IVKH
Control Set-up to K Clock Rise (RPS, WPS) 0.35 0.4 0.5 ns
t
SCDDR
t
IVKH
Double Data Rate Control Set-up to Clock
(K, K
) Rise (BWS
0
, BWS
1
, BWS
3
, BWS
4
)
0.35 0.4 0.5 ns
t
SD
t
DVKH
D
[X:0]
Set-up to Clock (K/K) Rise 0.35 0.4 0.5 ns
Hold Times
t
HA
t
KHAX
Address Hold after K Clock Rise 0.35 0.4 0.5 ns
t
HC
t
KHIX
Control Hold after K Clock Rise (RPS, WPS) 0.35 0.4 0.5 ns
t
HCDDR
t
KHIX
Double Data Rate Control Hold after Clock
(K, K
) Rise (BWS
0
, BWS
1
, BWS
3
, BWS
4
)
0.35 0.4 0.5 ns
t
HD
t
KHDX
D
[X:0]
Hold after Clock (K/K) Rise 0.35 0.4 0.5 ns
Output Times
t
CO
t
CHQV
C/C Clock Rise (or K/K in Single Clock Mode)
to Data Valid
–0.45–0.450.50ns
t
DOH
t
CHQX
Data Output Hold after Output C/C Clock Rise
(Active to Active)
0.45 –0.45 -0.50 ns
t
CCQO
t
CHCQV
C/C Clock Rise to Echo Clock Valid 0.45 0.45 0.50 ns
t
CQOH
t
CHCQX
Echo Clock Hold after C/C Clock Rise 0.45 –0.45 –0.50 ns
t
CQD
t
CQHQV
Echo Clock High to Data Valid 0.30 0.35 0.40 ns
t
CQDOH
t
CQHQX
Echo Clock High to Data Invalid –0.30 –0.35 –0.40 ns
t
CHZ
t
CHQZ
Clock (C/C) Rise to High-Z
(Active to High-Z)
[24,25]
–0.45–0.450.50ns
t
CLZ
t
CHQX1
Clock (C/C) Rise to Low-Z
[24,25]
–0.45 –0.45 –0.50 ns
DLL Timing
t
KC Var
t
KC Var
Clock Phase Jitter 0.20 0.20 0.20 ns
t
KC lock
t
KC lock
DLL Lock Time (K, C) 1024 1024 1024 cycles
t
KC Reset
t
KC Reset
K Static to DLL Reset 30 30 30 ns
Notes:
23.All devices can operate at clock frequencies as low as 119 MHz. When a part with a maximum frequency above 133 MHz is operating at a lower clock frequency,
it requires the input timings of the frequency range in which it is being operated and will output data with the output timings of that frequency range.
24.t
CHZ
, t
CLZ
, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
25.At any given voltage and temperature t
CHZ
is less than t
CLZ
and t
CHZ
less than t
CO
.
26.This part has a voltage regulator internally; t
POWER
is the time that the power needs to be supplied above V
DD
minimum initially before a read or write operation
can be initiated.
27.For D2 data signal on CY7C1425AV18 device, t
SD
is 0.5 ns for 200 MHz, and 250 MHz frequencies.
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CY7C1412AV18-167BZXI

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 2Mx18 QDR II Burst 2 SRAM IND
Lifecycle:
New from this manufacturer.
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