DPG15I200PA Datasheet DPG15I200PA | P1-P3

DPG15I200PA

Low Loss and Soft Recovery

High Performance Fast Recovery Diode

Single Diode

HiPerFRED²

13

Part number

DPG15I200PA

Backside: cathode

FAV

rr

tns35

RRM

15

200

=

V= V

I= A

Features / Advantages: Applications: Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

TO-220

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

IXYS reserves the right to change limits, conditions and dimensions.

20131125aData according to IEC 60747and per semiconductor unless otherwise specified

DPG15I200PA

n

s

3

A

T

VJ

=°C

reverse recovery time

A

6.5

35

55

n

s

I

RM

max. reverse recovery current

I

F

=A;15

25

T=125°C

VJ

-di

F

=A/µs200/dtt

rr

V

R

=V130

T

VJ

=°C25

T=125°C

VJ

V = V

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

1.26

R 1.7 K/

W

R

min.

15

V

RSM

V

1T = 25°C

VJ

T = °C

VJ

m

A

0.08V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

145

P

tot

90

W

T = 25°C

C

R K/

W

15

200

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Uni

t

1.51

T = 25°C

VJ

150

V

F0

V

0.69T = °C

VJ

175

r

F

18

m

Ω

V

1.01T = °C

VJ

I = A

F

V

15

1.29

I = A

F

30

I = A

F

30

threshold voltage

slope resistance

for power loss calculation only

µ

A

150

V

RRM

V

200

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

20

j

unction capacitance

V = V150 T = 25°Cf = 1 MHz

R

VJ

p

F

I

FSM

t = 10 ms; (50 Hz), sine; T = 45°C

VJ

max. forward surge current

V = 0 V

R

T = °C

VJ

175

240

A

200

FAV

d =rectangular 0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Fast Diode

200

0.50

IXYS reserves the right to change limits, conditions and dimensions.

20131125aData according to IEC 60747and per semiconductor unless otherwise specified

DPG15I200PA

Ratings

XXXXXX

Zyyww

Logo

Part Number

Date Code

Lot #

abcdef

Product Markin

g

A

ssembly Line

D

P

G

15

I

200

PA

Part number

Diode

HiPerFRED

extreme fast

Single Diode

TO-220AC (2)

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

op

°C

M

D

Nm0.6

mounting torque

0.4

T

VJ

°C175

virtual junction temperature

-55

Weight g2

Symbol Definition typ. max.min.Conditions

operation temperature

Unit

F

C

N60

mounting force with clip

20

I

RMS

RMS current

35 A

per terminal

150-55

TO-220

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

DPG15I200PA 506661Tube 50DPG15I200PAStandard

T

stg

°C150

storage temperature

-55

threshold voltage

V0.69

mΩ

V

0 max

R

0 max

slope resistance *

14.8

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Fast

Diode

175 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions.

20131125aData according to IEC 60747and per semiconductor unless otherwise specified

DPG15I200PA

DPG15I200PA

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