TECHNICAL DATA SHEET
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PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/350
T4-LDS-0170 Rev. 1 (101121) Page 1 of 4
DEVICES LEVELS
2N3867 2N3867S
JAN
2N3868 2N3868S
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3867 2N3868 Unit
Collector-Base Voltage V
CBO
40 60 Vdc
Collector-Emitter Voltage V
CEO
40 60 Vdc
Emitter-Base Voltage V
EBO
4.0 Vdc
Collector Current I
C
3.0 mAdc
Total Power Dissipation @ T
A
= +25°C
(1)
P
T
1.0 W/°C
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Ambient
R
θJA
175 °C/mW
Note: * Electrical characteristics for “S” suffix devices are identical to the “non S”
corresponding devices.
1/ Derate linearly 5.71mW/°C for T
A
> +25°C
2/ Derate linearly 57.1mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Current
V
(BR)CEO
Vdc
I
C
= 10μAdc
2N3867, S
2N3868, S
40
60
Collector-Base Cutoff Current
V
CB
= 40Vdc
V
CB
= 60Vdc
2N3867, S
2N3868, S
I
CBO
100 µAdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
I
EBO
100 µAdc
Collector-Emitter Cutoff Current
V
CE
= 40Vdc
V
CE
= 60Vdc
V
CE
= 40Vdc, T
A
= +150°C
V
CE
= 60Vdc, T
A
= +150°C
2N3867, S
2N3868, S
2N3867, S
2N3868, S
I
CEX
1.0
1.0
50
50
µAdc
TO-5 *
2N3867, 2N3868
TO-39 * (TP-205AD)
2N3867S, 2N3868S