2DC4617Q-7-F

2DC4617Q/R/S
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Ultra Miniature Surface Mount Package
Complementary PNP Type Available (2DA1774Q,R,S)
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin annealed over Alloy 42
leadframe).
Marking Information: (See Page 3): 2DC4617Q: 8D
2DC4617R: 8E
2DC4617S: 8F
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
A
M
J
L
D
B
N
C
H
K
G
C
E
B
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α
0° 8°
All Dimensions in mm
Maximum Ratings @T
A
= 25°C unless otherwise specified
DS30252 Rev. 9 - 2 1 of 3
www.diodes.com
2DC4617Q/R/S
© Diodes Incorporated
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
7.0 V
Collector Current - Continuous (Note 1)
I
C
150 mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
P
d
150 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
833 °C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
V
I
C
= 50μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
50
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
7.0
V
I
E
= 50μA, I
C
= 0
Collector Cutoff Current
I
CBO
100 nA
V
CB
= 60V
Emitter Cutoff Current
I
EBO
100 nA
V
EB
= 7.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain 2DC4617Q
2DC4617R
2DC4617S
h
FE
120
180
270
270
390
560
V
CE
= 6.0V, I
C
= 1.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.4 V
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
2.0 3.5 pF
V
CB
= 12V, f = 1.0MHz, I
E
= 0
Current Gain-Bandwidth Product
f
T
180
MHz
V
CE
= 12V, I
E
= -2mA, f = 1MHz
Current Gain-Bandwidth Product
f
T
180 Typ.
MHz
V
CE
= 12V, I
E
= 0A, f = 1MHz
Current Gain-Bandwidth Product
f
T
180 Typ.
MHz
V
CE
= 12V, I
C
= -2.0mA,
f = 100MHz
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
0
100 200
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DISSI
P
ATI
O
N (mW)
d
Note 1
1
0.1
10 100
1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
I
I
C
B
= 20
1
100
10
1,000
110
f,
100
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 3 Gain Bandwidth Product vs. Collector Current
C
V = 5V
CE
DS30252 Rev. 9 - 2 2 of 3
www.diodes.com
2DC4617Q/R/S
© Diodes Incorporated
Ordering Information (Note 6)
DS30252 Rev. 9 - 2 3 of 3
www.diodes.com
2DC4617Q/R/S
© Diodes Incorporated
Device
Packaging Shipping
2DC4617Q-7-F
SOT-523 3000/Tape & Reel
2DC4617R-7-F
SOT-523 3000/Tape & Reel
2DC4617S-7-F
SOT-523 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XX = Product Type Marking Code (See Page 1, e.g. 8D = 2DC4617Q)
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
XXYM
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

2DC4617Q-7-F

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN BIPOLAR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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