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FFPF60B150DSTU

P1-P3P4-P6
©2001 Fairchild Semiconductor Corporation
FFPF60B150DS
Rev. A, March 2001
DAMPER + MODULATION DIODE
Absolute Maximum Ratings (Modulation) T
C
=25°
°°
°C unless otherwise noted
Absolute Maximum Ratings (Damper)
T
C
=25°
°°
°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Value Units
V
RRM
Peak Repetitive Reverse Voltage 600 V
I
F(AV)
Average Rectified Forward Current @ T
C
= 100°C20 A
I
FSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
120 A
T
J,
T
STG
Operating Junction and Storage Temperature - 65 to +150 °C
Symbol Parameter Value Units
V
RRM
Peak Repetitive Reverse Voltage 1500 V
I
F(AV)
Average Rectified Forward Current @ T
C
= 100°C6 A
I
FSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
60 A
T
J,
T
STG
Operating Junction and Storage Temperature - 65 to +150 °C
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case 3.3 °C/W
FFPF60B150DS
Features
• High voltage and high reliability
• High speed switching
Modulation diode / Damper diode
• Low conduction loss
Modulation diode / Damper diode
Applications
• (Modulation + Damper) diode designed for
horizontal deflection circuits in C-TVs &
monitors
Damper Modulation
TO-220F
1 2 3
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
FFPF60B150DS
Electrical Characteristics*(Modulation) T
C
=25 °
°°
°C unless otherwise noted
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Electrical Characteristics*(Damper)
T
C
=25 °
°°
°C unless otherwise noted
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Symbol Parameter Min. Typ. Max. Units
V
FM
Maximum Instantaneous Forward Voltage
I
F
= 20A
I
F
= 20A
T
C
= 25 °C
T
C
= 100 °C
2.2
2.0
V
I
RM
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25 °C
T
C
= 100 °C
10
100
µA
t
rr
I
rr
Q
rr
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=20A, di/dt = 200A/µs)
90
8
360
ns
A
nC
Symbol Parameter Min Typ Max Units
V
FM
Maximum Instantaneous Forward Voltage
I
F
= 6A
I
F
= 6A
T
C
= 25 °C
T
C
= 100 °C
1.6
1.4
V
I
RM
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25 °C
T
C
= 100 °C
7
60
µA
t
rr
Maximum Reverse Recovery Time
(I
F
=1.0A, di/dt = 50A/µs)
170 ns
t
fr
Maximum Forward Recovery Time
(I
F
=6.5A, di/dt = 50A/µs)
350 ns
V
FRM
Maximum Forward Recovery Voltage 17 V
©2001 Fairchild Semiconductor Corporation Rev. A, March 2001
FFPF60B150DS
Typical Characteristics
Figure 1. Typical Forward Characteristics
(Modulation Diode)
Figure 3. Typical Reverse Current
vs. Reverse Voltage (Modulation Diode)
Figure 5. Typical Junction Capacitance
(Modulation Diode)
Figure 2. Typical Forward Characteristics
(Damper Diode)
Figure 4. Typical Reverse Current
vs. Reverse Voltage (Damper Diode)
Figure 6. Typical Junction Capacitance
(Damper Diode)
0.1
1
10
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 25
o
C
T
C
= 100
o
C
Forward Voltage , V
F
[V]
Forward Current , I
F
[A]
100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
T
C
= 100
o
C
T
C
= 25
o
C
Reverse Current , I
R
[uA]
Reverse Voltage , V
R
[V]
0.1 1 10 100
1
50
100
150
200
Typical Capacitance
at 0V = 178 pF
Capacitance , Cj [pF]
Reverse Voltage , V
R
[V]
0.1
1
10
50
0.0 0.4 0.8 1.2 1.6 2.0
T
J
= 25
o
C
T
J
= 125
o
C
Forward Voltage , V
F
[V]
Forward Current , I
F
[A]
0 300 600 900 1200 1500
0.001
0.01
0.1
1
10
100
T
J
= 100
o
C
T
J
= 125
o
C
T
J
= 25
o
C
Reverse Current , I
R
[
µ
A]
Reverse Voltage , V
R
[V]
0.1 1 10 100
0
20
40
60
80
100
120
Typical Capacitance
at 0V = 100 pF
Capacitance , Cj [pF]
Reverse Voltage , V
R
[V]
P1-P3P4-P6

FFPF60B150DSTU

Mfr. #:
Buy FFPF60B150DSTU
Manufacturer:
ON Semiconductor
Description:
DIODE STANDARD 1500V/600V TO220F
Lifecycle:
New from this manufacturer.
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