DSS5160T-7 Datasheet DSS5160T-7 | P1-P3

DSS5160T

Document number: DS35532 Rev. 1 - 2

1 of 6

www.diodes.com

January 2012

DSS5160T

60V LOW V

CE(sat)

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS5160T-7 ZP9 7 8mm 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

ZP9 = Product Type Marking Code

Top View

Device S

y

mbol Pin-Out To

p

SOT23

E

B

C

E

B

C

ZP9

DSS5160T

Document number: DS35532 Rev. 1 - 2

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January 2012

DSS5160T

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

-80 V

Collector-Emitter Voltage

V

CEO

-60 V

Emitter-Base Voltage

V

EBO

-5 V

Continuous Collector Current

I

C

-1 A

Peak Pulse Collector Current

I

CM

-2 A

Base Current (DC)

I

B

-300 mA

Peak Base Current

I

BM

-1 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

P

D

725 mW

Thermal Resistance, Junction to Ambient (Note 5)

R

θ

JA

172

°C/W

Thermal Resistance, Junction to Ambient Air (Note 4)

R

θ

JA

79 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Notes: 4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25.

5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

Thermal Characteristics

0.1 1 10 100

100µ

1m

10m

100m

1

10

0 20 40 60 80 100 120 140 160

0.0

0.2

0.4

0.6

0.8

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

100

120

140

160

180

T

amb

=25°C

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 1 10 100 1k

1

10

100

Single Pulse

T

amb

=25°C

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

Safe Operating Area

T

amb

=25°C

15mm x 15mm

1oz FR4

100µs

1ms

10ms

100ms

1s

DC

V

CE(sat)

Limit

-V

CE

Collector-Emitter Voltage (V)

- I

C

Collector Current (A)

DSS5160T

Document number: DS35532 Rev. 1 - 2

3 of 6

www.diodes.com

January 2012

DSS5160T

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

Collector-Base Breakdown Voltage

BV

CBO

-80

⎯ ⎯

V

I

C

= -100μA

Collector-Emitter Breakdown Voltage (Note 6)

BV

CEO

-60

⎯ ⎯

V

I

C

= -10mA

Emitter-Base Breakdown Voltage

BV

EBO

-5

⎯ ⎯

V

I

E

= -100μA

Collector-Base Cutoff Current

I

CBO

⎯ ⎯

-100

nA

V

CB

= -20V, I

E

= 0

⎯ ⎯

-50

μA

V

CB

= -20V, I

E

= 0, T

A

= 150°C

Emitter-Base Cutoff Current

I

EBO

⎯ ⎯

-100 nA

V

EB

= -5V, I

C

= 0

DC Current Gain (Note 6)

h

FE

200

⎯ ⎯

⎯

V

CE

= -5V, I

C

= -1mA

150

⎯ ⎯ V

CE

= -5V, I

C

= -500mA

100

⎯ ⎯ V

CE

= -5V, I

C

= -1A

Collector-Emitter Saturation Voltage (Note 6)

V

CE(sat)

⎯ ⎯

-175

mV

I

C

= -100mA, I

B

= -1mA

⎯ ⎯

-180

I

C

= -500mA, I

B

= -50mA

⎯ ⎯

-340

I

C

= -1A, I

B

= -100mA

Equivalent On-Resistance

R

CE

(

sat

)

⎯ ⎯

340

mΩ

I

E

= -1A, I

B

= -100mA

Base-Emitter Saturation Voltage

V

BE

(

sat

)

⎯ ⎯

-1.1 V

I

C

= -1A, I

B

= -50mA

Base-Emitter Turn-on Voltage

V

BE

(

on

)

⎯ ⎯

-0.9 V

V

CE

= -5V, I

C

= -1A

Transition Frequency

f

T

150

⎯ ⎯

MHz

V

CE

= -10V, I

C

= -50mA,

f = 100MHz

Output Capacitance

C

ob

⎯ ⎯

15 pF

V

CB

= -10V, f = 1MHz

Turn-On Time

t

on

⎯

75

⎯

ns

V

CC

= -10V, I

C

= -0.5A,

I

B1

= I

B2

= -25mA

Delay Time

t

d

⎯

35

⎯

ns

Rise Time

t

r

⎯

40

⎯

ns

Turn-Off Time

t

off

⎯

265

⎯

ns

Storage Time

t

s

⎯

230

⎯

ns

Fall Time

t

f

⎯

35

⎯

ns

Notes: 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DSS5160T-7

DSS5160T-7

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