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VS-10BQ030HM3/5BT

P1-P3P4-P6P7-P7
VS-10BQ030HM3
www.vishay.com
Vishay Semiconductors
Revision: 17-Dec-14
1
Document Number: 95740
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ030HM3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package SMB
I
F(AV)
1.0 A
V
R
30 V
V
F
at I
F
0.420 V
I
RM
max. 15 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
3.0 mJ
Cathode Anode
SMB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1.0 A
V
RRM
30 V
I
FSM
t
p
= 5 ms sine 430 A
V
F
1.0 A
pk
, T
J
= 125 °C 0.30 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ030HM3 UNITS
Maximum DC reverse voltage V
R
30 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
L
= 106 °C, rectangular waveform 1.0
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
430
10 ms sine or 6 ms rect. pulse 90
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 6 mH 3.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
VS-10BQ030HM3
www.vishay.com
Vishay Semiconductors
Revision: 17-Dec-14
2
Document Number: 95740
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
1 A
T
J
= 25 °C
0.420
V
2 A 0.470
1 A
T
J
= 125 °C
0.300
2 A 0.370
Maximum reverse leakage current I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.5
mAT
J
= 100 °C 5.0
T
J
= 125 °C 15
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
(1)
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to lead
R
thJL
(2)
DC operation 25
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
80
Approximate weight
0.10 g
0.003 oz.
Marking device Case style SMB (similar DO-214AA) 1E
dP
tot
dT
J
-------------
1
R
thJA
--------------<
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0
0.1
0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 125 °C
10
0.01
0.001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0
0.0001
3010 20
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0.1
1
VS-10BQ030HM3
www.vishay.com
Vishay Semiconductors
Revision: 17-Dec-14
3
Document Number: 95740
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
1000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
302010
T
J
= 25 °C
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
90
100
110
120
130
0 0.4 0.8 1.2 1.6
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
Square wave (D = 0.50)
80 % rated V
R
applied
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0.2
0.4
0.5
0
0.4 0.8 1.2
1.6
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
0.1
0.3
t
p
- Square Wave Pulse Duration (µs)
100
1000
I
FSM
- Non-Repetitive Surge Current (A)
10
100
1000
10 000
10
At any rated load condition and
with rated V
RRM
applied
following surge
P1-P3P4-P6P7-P7

VS-10BQ030HM3/5BT

Mfr. #:
Buy VS-10BQ030HM3/5BT
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - SMB-e3
Lifecycle:
New from this manufacturer.
Delivery:
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