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STB100NH02LT4

P1-P3P4-P6P7-P9P10-P12P13-P13
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Electrical characteristics STB100NH02L
4/13
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 25mA, V
GS
=0 24 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 20V
V
DS
= 20V, T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 1 1.8 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 30A
V
GS
= 5V, I
D
= 15A
0.0052
0.007
0.006
0.011
Ω
Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
V
DS
= 10V
,
I
D
=30A 40 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 15V, f = 1MHz,
V
GS
= 0
2850
800
120
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 10V, I
D
= 30A
R
G
=4.7Ω V
GS
= 10V
(see Figure 13)
13
75
50
18
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 10V, I
D
= 30A,
V
GS
= 10V, R
G
=4.7Ω
(see Figure 14)
47.5
10
7
64 nC
nC
nC
R
G
Gate input resistance
f=1 MHz gate DC
Bias=0
test signal level =20 mV
open drain
1 Ω
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STB100NH02L Electrical characteristics
5/13
Table 5. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
60
240
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 30A, V
GS
= 0 1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 60A, di/dt = 100A/µs,
V
DD
= 16V, T
j
= 150°C
(see Figure 15)
35
35
2
ns
nC
A
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Electrical characteristics STB100NH02L
6/13
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P13

STB100NH02LT4

Mfr. #:
Buy STB100NH02LT4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 24 Volt 60 Amp
Lifecycle:
New from this manufacturer.
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