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VEMD10940FX01

P1-P3P4-P6
VEMD10940FX01
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 04-Dec-15
1
Document Number: 84217
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD10940FX01 is a high speed and high sensitive PIN
photodiode in a miniature side looking, surface mount
package (SMD) with daylight blocking filter. Filter is matched
with IR emitters operating at wavelength of 830 nm to
950 nm. The photo sensitive area of the chip is 0.23 mm
2
.
FEATURES
• Package type: surface mount
• Package form: Side view
• Dimensions (L x W x H in mm): 3 x 2 x 1
• AEC-Q101 qualified
• High radiant sensitivity
• Daylight blocking filter matched with 830 nm
to 950 nm IR emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 75°
• Package matched with IR emitter
VSMB10940X01
• Floor life: 168 h, MSL 3, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Infrared remote control
• Infrared data transmission
• Photo interrupters
• IR touch panels
• Automotive applications
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.5
(nm)
VEMD10940FX01 3 ± 75 780 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD10940FX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
≤ 25 °C P
V
104 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature According to reflow solder profile fig. 8 T
sd
260 °C
Thermal resistance junction / ambient According to J-STD-051 R
thJA
450 K/W
VEMD10940FX01
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 04-Dec-15
2
Document Number: 84217
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Diode Capacitance vs. Reverse Voltage
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
-1.56- V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
32 - - V
Reverse dark current V
R
= 10 V, E = 0 I
ro
- 1 10 nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
-3.3-pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
-1.5-pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
- 350 - mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
--2.7-mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
-2.8-μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
-0.4-%/K
Reverse light current E
e
= 1 mW/cm
2
, λ = 950 nm, V
R
= 5 V I
ra
234μA
Angle of half sensitivity ϕ -± 75-deg
Wavelength of peak sensitivity λ
p
- 950 - nm
Range of spectral bandwidth λ
0.5
- 780 to 1050 - nm
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
- 100 - ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
- 100 - ns
20
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
94 8427
V
R
= 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
0.1
1
10
100
0.01
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm
2
)
V
R
= 5 V
λ = 950 nm
10
1
0.1
0
2
4
6
8
0.1
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
94 8430
E = 0
f = 1 MHz
100
10
1
VEMD10940FX01
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 04-Dec-15
3
Document Number: 84217
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement-
Horizontal
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement -
Vertical
REFLOW SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+5 °C), RH < 5 %.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
600 700 800 900 1000 1100
S(λ)
rel
- Relative Spectral Sensitivity
λ - Wavelength (nm)
0.4 0.2 0
I
e, rel
- Relative Radiant Sensitivity
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
0.4 0.2 0
I
e, rel
- Relative Radiant Sensitivity
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
P1-P3P4-P6

VEMD10940FX01

Mfr. #:
Buy VEMD10940FX01
Manufacturer:
Vishay Semiconductors
Description:
Photodiodes 60volt 104mW 950nM 75Deg Automotive
Lifecycle:
New from this manufacturer.
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