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SIR882ADP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
SiR882ADP
www.vishay.com
Vishay Siliconix
S17-0407-Rev. B, 20-Mar-17
4
Document Number: 63367
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50-250 255075100125150
V
GS(th)
- Variance (V)
T
J
-Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.000
0.008
0.016
0.024
0.032
0.040
0246810
R
DS(on)
-On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 20 A
0.01
0.1
1
10
100
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
10 s
1 s
DC
I
D
Limited
SiR882ADP
www.vishay.com
Vishay Siliconix
S17-0407-Rev. B, 20-Mar-17
5
Document Number: 63367
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power, Junction-to-Case Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
0 25 50 75 100 150125
16
32
48
64
80
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
0
0 25 50 75 100 125 150
20
40
60
80
100
T
C
- Case Temperature (°C)
Power (W)
0
0 25 50 75 100 125 150
0.5
1.0
1.5
2.0
2.5
T
A
- Ambient Temperature (°C)
Power (W)
SiR882ADP
www.vishay.com
Vishay Siliconix
S17-0407-Rev. B, 20-Mar-17
6
Document Number: 63367
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63367
.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
t
1
P
DM
t
2
10
-4
10
-3
10
-2
10
-1
1
1
0.1
0.01
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR882ADP-T1-GE3

Mfr. #:
Buy SIR882ADP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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