©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB1097
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage - 80 V
V
CEO
Collector-Emitter Voltage - 60 V
V
EBO
Emitter-Base Voltage - 7 V
I
C
Collector Current (DC) - 7 A
I
CP
*Collector Current (Pulse) - 15 A
I
B
Base Current - 3.5 A
P
C
Collector Dissipation (T
a
=25°C) 2 W
P
C
Collector Dissipation (T
C
=25°C) 30 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
I
CBO
Collector Cut-off Current V
CB
= - 60V, I
E
= 0 - 10 µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 10 µA
h
FE1
h
FE2
* DC Current Gain V
CE
= - 1V, I
C
= - 3A
V
CE
= - 1V, I
C
= - 5A
40
20
200
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= - 5A, I
B
= - 0.5A - 0.5 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= - 5A, I
B
= - 0.5A - 1.5 V
Classification R O Y
h
FE1
40 ~ 80 60 ~ 120 100 ~ 200
KSB1097
Low Frequency Power Amplifier
• Low Speed Switchng Industrial Use
• Complement to KSD1588
1
1.Base 2.Collector 3.Emitter
TO-220F
