SIR401DP-T1-GE3 Datasheet SIR401DP-T1-GE3 | P1-P3

Vishay Siliconix

SiR401DP

New Product

Document Number: 63661

S12-0334-Rev. A, 13-Feb-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 20 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• 100% R

g

and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Adaptor Switch

• Battery Switch

• Load Switch

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 70 °C/W.

d. Package limited.

e. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() Max.

I

D

(A)

d

Q

g

(Typ.)

- 20

0.0032 at V

GS

= - 10 V - 50

97 nC0.0042 at V

GS

= - 4.5 V - 50

0.0077 at V

GS

= - 2.5 V - 50

Ordering Information:

SiR401DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

- 20

V

Gate-Source Voltage

V

GS

± 12

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 50

d

A

T

C

= 70 °C

- 50

d

T

A

= 25 °C

- 29

a, b

T

A

= 70 °C

- 23.5

a, b

Pulsed Drain Current (t = 300 µs)

I

DM

- 80

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 35.5

d

T

A

= 25 °C

- 4.5

a, b

Avalanche Current

L = 0.1 mH

I

AS

- 30

Single-Pulse Avalanche Energy

E

AS

45 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

39

W

T

C

= 70 °C 25

T

A

= 25 °C

5

a, b

T

A

= 70 °C

3.2

a, b

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

e, f

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, c

t 10 s

R

thJA

20 25

°C/W

Maximum Junction-to-Case

Steady State

R

thJC

2.1 3.2

www.vishay.com

2

Document Number: 63661

S12-0334-Rev. A, 13-Feb-12

Vishay Siliconix

SiR401DP

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0, I

D

= - 250 µA

- 20 V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= - 250 µA

- 12

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

3.3

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.6 - 1.5 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 12 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 20 V, V

GS

= 0 V

- 1

µA

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 55 °C

- 5

On-State Drain Current

a

I

D(on)

V

DS

 - 10 V, V

GS

= - 10 V - 30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V, I

D

= - 15 A

0.0025 0.0032



V

GS

= - 4.5 V, I

D

= - 12 A

0.0033 0.0042

V

GS

= - 2.5 V, I

D

= - 10 A

0.0055 0.0077

Forward Transconductance

a

g

fs

V

DS

= - 10 V, I

D

= - 15 A

77 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= - 10 V, V

GS

= 0 V, f = 1 MHz

9080

pFOutput Capacitance

C

oss

1120

Reverse Transfer Capacitance

C

rss

1195

Total Gate Charge

Q

g

V

DS

= - 10 V, V

GS

= - 10 V, I

D

= - 10 A

205 310

nC

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 10 A

97 146

Gate-Source Charge

Q

gs

15.4

Gate-Drain Charge

Q

gd

25.6

Gate Resistance

R

g

f = 1 MHz 0.4 3 6 

Tur n - On D el ay T im e

t

d(on)

V

DD

= - 10 V, R

L

= 1 

I

D

 - 10 A, V

GEN

= - 10 V, R

g

= 1 

14 28

ns

Rise Time

t

r

13 26

Turn-Off DelayTime

t

d(off)

175 300

Fall Time

t

f

41 80

Tur n - On D el ay T im e

t

d(on)

V

DD

= - 10 V, R

L

= 1 

I

D

 - 10 A, V

GEN

= - 4.5 V, R

g

= 1 

70 140

Rise Time

t

r

65 130

Turn-Off DelayTime

t

d(off)

160 300

Fall Time

t

f

55 100

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current I

S

T

C

= 25 °C - 35.5

A

Pulse Diode Forward Current I

SM

- 80

Body Diode Voltage V

SD

I

S

= - 3 A, V

GS

= 0 - 0.67 - 1.1 V

Body Diode Reverse Recovery Time t

rr

I

F

= - 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

59 110 ns

Body Diode Reverse Recovery Charge Q

rr

48 95 nC

Reverse Recovery Fall Time t

a

25

ns

Reverse Recovery Rise Time t

b

34

Document Number: 63661

S12-0334-Rev. A, 13-Feb-12

www.vishay.com

3

Vishay Siliconix

SiR401DP

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

16

32

48

64

80

0.0 0.5 1.0 1.5 2.0 2.5

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 2 V

V

GS

= 10 V thru 3 V

V

GS

= 1 V

0.002

0.003

0.004

0.005

0.006

0.007

0 16 32 48 64 80

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 2.5 V

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0 42 84 126 168 210

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

DS

= 10 V

V

DS

= 15 V

V

DS

= 5 V

I

D

= 10 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0 0.6 1.2 1.8 2.4 3.0

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

0

2400

4800

7200

9600

12 000

0 4 8 12 16 20

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

I

D

= 15 A

V

GS

= 10 V

V

GS

= 2.5 V

SIR401DP-T1-GE3

SIR401DP-T1-GE3

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