Products and specifications discussed herein are subject to change by Micron without notice.
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
Features
PDF: 09005aef80765fab/Source: 09005aef806e1d28 Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD8C32_64x64HD.fm - Rev. E 11/08 EN
1 ©2004 Micron Technology, Inc. All rights reserved.
DDR SDRAM SODIMM
MT8VDDT3264HD – 256MB
1
MT8VDDT6464HD – 512MB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 64), 512MB (64 Meg x 64)
•V
DD = VDDQ = +2.5V
(-40B: V
DD = VDDQ = +2.6V)
•V
DDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
•Dual rank
• Gold edge contacts
Figure 1: 200-Pin SODIMM (MO-224)
Notes: 1. Not recommended for new designs.
2. Contact Micron for industrial temperature
module offerings.
Options Marking
• Operating temperature
2
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C) I
•Package
– 200-pin DIMM (standard) G
– 200-pin DIMM (lead-free) Y
• Memory clock, speed, CAS latency
– 5.0ns (200 MHz), 400 MT/s, CL = 3 -40B
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5 -335
– 7.5ns (133 MHz), 266 MT/s, CL = 2
1
-26A
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
1
-265
PCB height: 31.75mm (1.25in)
Notes: 1. The values of
t
RCD and
t
RP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns) NotesCL = 3 CL = 2.5 CL = 2
-40B PC3200 400 333 266 15 15 55
-335 PC2700 – 333 266 18 18 60 1
-26A PC2100 – 266 266 20 20 65
-265 PC2100 – 266 200 20 20 65