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VS-8EWF04STRR-M3

P1-P3P4-P6P7-P8
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
www.vishay.com
Vishay Semiconductors
16-Jan-17
4
Document Number: 93375
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
1
10
100
0.5 1 1.5 2 2.5 3
T = 2 5 ° C
J
Instantaneous Forward Current (A)
In st a n t a n e o u s Fo rw a r d V o lt a g e ( V )
T = 1 5 0° C
J
8EWF..S Series
0
0.1
0.2
0.3
0.4
0 40 80 120 160 200
Rate Of Fall Of Forward Current - dI/ dt (A/µs)
1 A
5 A
10 A
Typical Reverse Recovery Time - Trr (µs)
8EWF..S Se rie s
T = 2 5 ° C
J
I = 20 A
FM
8 A
2 A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 40 80 120 160 200
Rate Of Fall Of Forward Current - dI/dt (A/µs)
1 A
5 A
10 A
Typical
Reverse Recovery Charge - Qrr (µC)
8EWF..S Series
T = 2 5 ° C
I = 20 A
FM
2 A
J
8 A
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 40 80 120 160 200
Rate Of Fall Of Forward Current - dI/dt (A/µs)
1 A
5 A
10 A
Typical
Reverse Recovery Charge - Qrr (µC)
8 E W F . . S Se r i e s
T = 150 °C
J
I = 20 A
FM
2 A
8 A
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200
Typical
Reverse Rec overy Current - Irr (A)
Rate Of Fall Of Forward Current - dI/dt (A/µs)
1 A
5 A
10 A
8EWF..S Se ries
T = 2 5 ° C
J
I = 20 A
FM
2 A
8 A
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
www.vishay.com
Vishay Semiconductors
16-Jan-17
5
Document Number: 93375
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
0
2
4
6
8
10
12
14
16
18
20
0 40 80 120 160 200
Typical
Reverse Re c overy Current - Irr (A)
Rate Of Fall Of Forward Current - dI/dt (A/µs)
1 A
5 A
10 A
8 EW F . . S Se r i e s
T = 150 °C
I = 20 A
FM
2 A
J
8 A
0.1
1
10
1.010.0100.01000.0
Squa re Wave Pulse Duration (s)
St e a d y St a t e V a l u e
(DC Op eration)
Single Pulse
thJC
8EWF..S Series
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Transient Thermal Impedance Z (°C/W)
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
www.vishay.com
Vishay Semiconductors
16-Jan-17
6
Document Number: 93375
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-8EWF02S-M3 75 3000 Antistatic plastic tubes
VS-8EWF02STR-M3 2000 2000 13" diameter reel
VS-8EWF02STRL-M3 3000 3000 13" diameter reel
VS-8EWF02STRR-M3 3000 3000 13" diameter reel
VS-8EWF04S-M3 75 3000 Antistatic plastic tubes
VS-8EWF04STR-M3 2000 2000 13" diameter reel
VS-8EWF04STRL-M3 3000 3000 13" diameter reel
VS-8EWF04STRR-M3 3000 3000 13" diameter reel
VS-8EWF06S-M3 75 3000 Antistatic plastic tubes
VS-8EWF06STR-M3 2000 2000 13" diameter reel
VS-8EWF06STRL-M3 3000 3000 13" diameter reel
VS-8EWF06STRR-M3 3000 3000 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95627
Part marking information www.vishay.com/doc?95176
Packaging information www.vishay.com/doc?95033
SPICE model www.vishay.com/doc?95551
1 - Vishay Semiconductors product
2 - Current rating (8 = 8 A)
3
- Circuit configuration:
E = single diode
4
- Package:
W = D-PAK
5
- Type of silicon:
F = fast soft recovery rectifier
6
- Voltage code x 100 = V
RRM
7
- S = surface mountable
8 - TR = tape and reel
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
02 = 200 V
04 = 400 V
06 = 600 V
- Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
9
Device code
51 32 4 6 7 8 9
VS- 8 E W F 06 S TR -M3
P1-P3P4-P6P7-P8

VS-8EWF04STRR-M3

Mfr. #:
Buy VS-8EWF04STRR-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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