DMB54D0UV
Document number: DS31676 Rev. 5 - 2
4 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB54D0UV
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
1
10
0.001 0.01 0.1 1
V = 4.0V
GS
V= 2.5V
GS
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
Ω
1
10
0 0.1 0.2 0.3 0.4 0.5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 5 On-Resistance Variation with Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R , DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
DS(ON)
V = 2.5V
I = 80mA
GS
D
V = 4V
I = 100mA
GS
D
0.4
Fig. 6 Typical Capacitance
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
,
A
A
I
A
E (p
)
0
5
10
15
20
25
30
35
f = 1MHz
V = 0V
GS
C
iss
C
oss
C
rss
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.6
0.7
0.8
0.9
1.0
1.1
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
I, S
E
E
(A)
S
Fig. 8 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
0.1 0.3 0.5 0.7 0.9 1.1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A