DMB54D0UV-7

DMB54D0UV
Document number: DS31676 Rev. 5 - 2
4 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB54D0UV
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
1
10
0.001 0.01 0.1 1
V = 4.0V
GS
V= 2.5V
GS
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
1
10
0 0.1 0.2 0.3 0.4 0.5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 5 On-Resistance Variation with Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R , DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
DS(ON)
V = 2.5V
I = 80mA
GS
D
V = 4V
I = 100mA
GS
D
0.4
Fig. 6 Typical Capacitance
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
,
A
A
I
A
E (p
)
0
5
10
15
20
25
30
35
f = 1MHz
V = 0V
GS
C
iss
C
oss
C
rss
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.6
0.7
0.8
0.9
1.0
1.1
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
I, S
E
E
(A)
S
Fig. 8 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
0.1 0.3 0.5 0.7 0.9 1.1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
5 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB54D0UV
-50 0
50
100 150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 9 Derating Curve - Total Package Power Dissipation
A
°
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
300
RC/W
θ
JA
°
= 500
PNP Transistor
1
10
100
1,000
110100
1,000
V = 5V
CE
h, D
E
AI
FE
I , COLLECTOR CURRENT (mA)
Fig. 10 Typical DC Current Gain vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
0.1 10 100
1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 11 Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10
100
1,000
1
10
100
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
t
I , COLLECTOR CURRENT (mA)
Fig. 12 Typical Gain-Bandwidth Product vs. Collector Current
C
V = 5V
CE
DMB54D0UV
Document number: DS31676 Rev. 5 - 2
6 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB54D0UV
Package Outline Dimensions
Suggested Pad Layout
SOT563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
A
M
L
B
C
H
K
G
D
X
Z
Y
C1
C2
C2
G

DMB54D0UV-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET PNP/NMOS
Lifecycle:
New from this manufacturer.
Delivery:
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