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BYV13-TAP

P1-P3P4-P5
BYV12, BYV13, BYV14, BYV15, BYV16
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 04-Sep-12
1
Document Number: 86039
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYV16 BYV16-TR 5000 per 10" tape and reel 25 000
BYV16 BYV16-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV12 V
R
= 100 V; I
F(AV)
= 1.5 A SOD-57
BYV13 V
R
= 400 V; I
F(AV)
= 1.5 A SOD-57
BYV14 V
R
= 600 V; I
F(AV)
= 1.5 A SOD-57
BYV15 V
R
= 800 V; I
F(AV)
= 1.5 A SOD-57
BYV16 V
R
= 1000 V; I
F(AV)
= 1.5 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYV12 V
R
= V
RRM
100 V
BYV13 V
R
= V
RRM
400 V
BYV14 V
R
= V
RRM
600 V
BYV15 V
R
= V
RRM
800 V
BYV16 V
R
= V
RRM
1000 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
40 A
Repetitive peak forward current I
FRM
9A
Average forward current = 180° I
F(AV)
1.5 A
Non repetitive reverse avalanche energy I
(BR)R
= 0.4 A E
R
10 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
45 K/W
On PC board with spacing 25 mm R
thJA
100 K/W
BYV12, BYV13, BYV14, BYV15, BYV16
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 04-Sep-12
2
Document Number: 86039
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 2 - Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 1 A V
F
--1.5V
Reverse current
V
R
= V
RRM
I
R
-15μA
V
R
= V
RRM
, T
j
= 150 °C I
R
- 60 150 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 300 ns
Reverse recovery charge I
F
= 1 A, dI/dt = 5 A/μs Q
rr
- - 200 nC
0
20
40
80
60
100
120
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949101
ll
T
L
= constant
0
40
80
120
160
200
240
0 200 400 600 800 1000
V
R
, V
RRM
- Rev./Rep. Peak Rev. Voltage (V)
949517
T
j
- Junction Temperature (°C)
BYV12
BYV13
BYV14
BYV15
BYV16
V
RRM
V
R
R
thJA
= 100 K/W
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1.0 1.5 2.0 3.02.5
V
F
- Forward Voltage (V)
16375
T
j
= 25 °C
T
j
= 175 °C
16376
I
FAV
- Average Forward Current (A)
0 20406080100120140160180
T
amb
- Ambient Temperature (°C)
1.6
1.2
1.4
1.0
0.8
0.6
0.4
0.2
0
V
R
= V
RRM
half sinewave
R
thJA
= 100 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
I = 10 mm
BYV12, BYV13, BYV14, BYV15, BYV16
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 04-Sep-12
3
Document Number: 86039
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Reverse Current vs. Junction Temperature Fig. 6 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 7 - Diode Capacitance vs. Reverse Voltage
Fig. 8 - Thermal Response
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16377
I
R
- Reverse Current (μA)
V
R
= V
RRM
0
50
250
100
300
150
350
200
400
450
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16378
P
R
- Reverse Power Dissipation (mW)
P
R
-Limit
at 100 % V
R
P
R
-Limit
at 80 % V
R
V
R
= V
RRM
0
5
10
15
20
30
25
35
40
0.1 1 10 100
V
R
- Reverse Voltage (V)
16379
C
D
- Diode Capacitance (pF)
f = 1 MHz
1
10
100
1000
10
-5
10
1
10
0
10
1
10
0
10
-1
10
-2
10
-3
10
-4
t
p
- Pulse Length (s)I
FRM
- Repetitive Peak
Forward Current (A)
949522
Z
thp
- Thermal Resist. for Pulse Cond. (K/W)
V
RRM
= 1000 V
R
thJA
= 100 K/W
T
amb
= 25 °C
45 °C
50 °C
70 °C
100 °C
Single pulse
t
p
/T = 0.5
0.2
0.02
0.01
0.1
P1-P3P4-P5

BYV13-TAP

Mfr. #:
Buy BYV13-TAP
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 400 Volt 1.5 Amp 40 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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