Document Number: 38-05569 Rev. *I Page 4 of 18
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature
with power applied .................................. –55 °C to + 125 °C
Supply voltage
to ground potential
[4, 5]
... –0.3 V to 3.9 V (V
CC MAX
+ 0.3 V)
DC voltage applied to outputs
in High Z state
[4, 5]
.......... –0.3 V to 3.9 V (V
CC MAX
+ 0.3 V)
DC input voltage
[4, 5]
....... –0.3 V to 3.9 V (V
CC MAX
+ 0.3 V)
Output current into outputs (LOW) .............................20 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) ......................... > 2001 V
Latch up current .....................................................> 200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[6]
CY62136EV30LL Industrial –40 °C to +85 °C 2.2 V–3.6 V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
45 ns
Unit
Min Typ
[7]
Max
V
OH
Output HIGH voltage I
OH
= –0.1 mA V
CC
= 2.20 V 2.0 – – V
I
OH
= –1.0 mA V
CC
= 2.70 V 2.4 – – V
V
OL
Output LOW voltage I
OL
= 0.1 mA V
CC
= 2.20 V – – 0.4 V
I
OL
= 2.1 mA V
CC
= 2.70 V – – 0.4 V
V
IH
Input HIGH voltage V
CC
= 2.2 V to 2.7 V 1.8 – V
CC
+ 0.3 V
V
CC
= 2.7 V to 3.6 V 2.2 – V
CC
+ 0.3 V
V
IL
Input LOW voltage V
CC
= 2.2 V to 2.7 V –0.3 – 0.6 V
V
CC
= 2.7 V to 3.6 V –0.3 – 0.8 V
I
IX
Input leakage current GND < V
I
< V
CC
–1 – +1 A
I
OZ
Output leakage current GND < V
O
< V
CC
, output disabled –1 – +1 A
I
CC
V
CC
operating supply current f = f
max
= 1/t
RC
V
CC
= V
CCmax,
I
OUT
= 0 mA
CMOS levels
–1520mA
f = 1 MHz – 2 2.5
I
SB1
[8]
Automatic CE power-down
current – CMOS inputs
CE > V
CC
0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V
f = f
max
(address and data only),
f = 0 (OE
, and WE), V
CC
= 3.60 V
–17A
I
SB2
[8]
Automatic CE power-down
current – CMOS inputs
CE > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2V, f = 0,
V
CC
= 3.60 V
–17A
Notes
4. V
IL(min.)
= –2.0 V for pulse durations less than 20 ns.
5. V
IH(max)
= V
CC
+ 0.75 V for pulse durations less than 20 ns.
6. Full Device AC operation assumes a 100 s ramp time from 0 to Vcc(min) and 200 s wait time after V
CC
stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25 °C.
8. Chip enable (CE
) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
SB1
/ I
SB2
/ I
CCDR
specification. Other inputs can be left floating.
