MCL4148, MCL4448
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Vishay Semiconductors
Rev. 2.2, 14-Jul-17
1
Document Number: 85566
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes / options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon epitaxial planar diode
• Saving space
• Hermetic sealed parts
• Fits onto SOD-323 / SOT-23 footprints
• Electrical data identical with the devices 1N4148
and 1N4448 respectively
• MicroMELF package
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS
MCL4148 V
RRM
= 100 V, V
F
at I
F
50 mA = 1 V MCL4148-TR3 or MCL4148-TR Single Tape and reel
MCL4448 V
RRM
= 100 V, V
F
at I
F
100 mA = 1 V MCL4448-TR3 or MCL4448-TR Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
75 V
Repetitive peak reverse voltage V
RRM
100 V
Peak forward surge current t
p
= 1 μs I
FSM
2A
Repetitive peak forward current I
FRM
450 mA
Forward continuous current I
F
200 mA
Average forward current V
R
= 0 V I
F(AV)
150 mA
Power dissipation P
tot
500 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Mounted on epoxy-glass
hard tissue, Fig. 5,
35 μm copper clad, 0.9 mm
2
copper area per electrode
R
thJA
500 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
-65 to +175 °C