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PHM12NQ20T,518

P1-P3P4-P6P7-P9P10-P12
Philips Semiconductors
PHM12NQ20T
TrenchMOS™ standard level FET
Preliminary data Rev. 01 — 30 January 2003 4 of 12
9397 750 10876
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4. Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to mounting base Figure 4 --2K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
03aj27
10
-3
10
-2
10
-1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
t
p
t
p
T
P
t
T
δ =
Philips Semiconductors
PHM12NQ20T
TrenchMOS™ standard level FET
Preliminary data Rev. 01 — 30 January 2003 5 of 12
9397 750 10876
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5. Characteristics
Table 4: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V
T
j
=25°C 200 - - V
T
j
= −55 °C 178 - - V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS;
Figure 9
T
j
=25°C 234V
T
j
= 150 °C 1.2 - - V
T
j
= −55° C --6V
I
DSS
drain-source leakage current V
DS
= 160 V; V
GS
=0V
T
j
=25°C --1µA
T
j
= 150 °C - - 100 µA
I
GSS
gate-source leakage current V
GS
= ±10 V; V
DS
= 0 V - 10 100 nA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
=12A;Figure 7 and 8
T
j
=25°C - 108 130 mΩ
T
j
= 150 °C - 260 312 mΩ
V
GS
=5V; I
D
= 3 A - 110 150 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 4 A; V
DD
= 100 V; V
GS
=10V;Figure 13 -26-nC
Q
gs
gate-source charge - 4 - nC
Q
gd
gate-drain (Miller) charge - 8.7 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 25 V; f = 1 MHz; Figure 12 - 1230 - pF
C
oss
output capacitance - 155 - pF
C
rss
reverse transfer capacitance - 48 - pF
t
d(on)
turn-on delay time V
DD
= 100 V; I
D
= 4 A; V
GS
= 10 V; R
G
=6Ω - 12.5 - ns
t
r
rise time - 10.2 - ns
t
d(off)
turn-off delay time - 34.5 - ns
t
f
fall time - 13.5 - ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 4 A; V
GS
=0V;Figure 11 - 0.71 1.2 V
t
rr
reverse recovery time I
S
= 4 A; dI
S
/dt = −100 A/µs; V
R
= 120 V;
V
GS
=0V
- 104 - ns
Q
r
recovered charge - 245 - nC
Philips Semiconductors
PHM12NQ20T
TrenchMOS™ standard level FET
Preliminary data Rev. 01 — 30 January 2003 6 of 12
9397 750 10876
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
=25°CT
j
=25°C and 150 °C; V
DS
> I
D
× R
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
003aaa236
0
1
2
3
4
00.5
1
1.5
2
V
DS
(V)
(A)
3.8 V
10 V
4 V
4.5 V
I
D
V
GS
= 3.6 V
003aaa237
0
2
4
6
8
012345
(A)
I
D
V
GS
(V)
T
j
= 150 °C
25 °C
003aaa238
0
100
200
300
400
02468
3.8 V
(mΩ)
R
DSon
I
D
(A)
V
GS
= 4 V
4.5 V
5 V
10 V
03al52
0
1
2
3
-60 0 60 120 180
T
j
(
°
C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
P1-P3P4-P6P7-P9P10-P12

PHM12NQ20T,518

Mfr. #:
Buy PHM12NQ20T,518
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 200V 14.4A 8HVSON
Lifecycle:
New from this manufacturer.
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