RB160A90
Diodes
Rev.D 1/3
Schottky barrier diode
RB160A90
zApplications z Dimensions (Unit : mm)
General rectification
zFeatures
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low I
R
.
4) High ESD.
zConstruction
Silicon epitaxial planar z Taping specifications (Unit : mm)
zAbsolute maximum ratings (Ta=25°C)
zElectrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
V
F
0.54 0.64 0.73 V
I
F
=1.0A
Reverse current
I
R
-5.00100 µA
V
R
=90V
ESD break down voltage
ESD
5--
kV
C=100pF,R=1.5k
Ω
forward and reverse : 1 time
Forward voltage
ConditionsParameter
A
H2
E
B
C
L2
L1
F
D
H1
BROWN
BLUE
T-31 52.4±1.5
T-31 5.0±0.5
T-31 5.0±0.3
T-31
T-32
T-31
T-32
T-31 1/2A±1.2
T-32 1/2A±0.4
T-31 ±0.7
T-32 0.2 max.
T-31
T-32
T-31
T-32
T-31 1.5 max.
T-32 0.4 max.
＊H1(6mm)：BROWN
H2 5.0±0.5
|L1-L2|
E
Ｆ
H1 6.0±0.5
D0
B
C1.0 max.
Symbol
Standard dimension
value(mm)
Ａ
T-32 26.0
+0.4
0
ROHM : MSR
①
Manufacture Date
②
29±1 29±1
3.0±0.2
φ0.6±0.1
φ2.5±0.2
CATHODE BAND
8
Symbol Unit
V
RM
V
V
R
V
Io A
Forward current surge peak （t=100µs）
I
FSM
A
Tj
℃
Tstg
℃
Parameter Limits
Junction temperature
(*1) Mounted on epoxy board. 180°Half sine wave
Average rectified forward current (*1) 1
50
150
Reverse voltage (repetitive peak) 90
Reverse voltage (DC) 90
Storage temperature -55 to +150
