2016 Microchip Technology Inc. DS20005611A-page 1
DSC2311
Features
Two Simultaneous CMOS Outputs
- Output 1 Range: 2.3 MHz to 170 MHz
- Output 2 Range: 2.3 MHz to 170 MHz
Low RMS Phase Jitter: <1 ps (typ.)
High Stability: ±25 ppm, ±50 ppm
Wide Temperature Range
- Automotive: –40
°
C to +125
°
C
- Ext. Industrial –40
°
C to +105
°
C
- Industrial –40
°
C to +85
°
C
- Ext. Commercial –20
°
C to +70
°
C
High Supply Noise Rejection: –50 dBc
High Shock and Vibration Immunity
- Qualified to MIL-STD-883
High Reliability
- 20x higher MTBF than crystal-based clock
generator designs
Supply Range of 2.25V to 3.6V
Lead Free and RoHS-Compliant
Applications
Consumer Electronics
Camera and Imaging Modules
Home Automation
Industrial and Power Conversion
Mobile Communications, Internet, and Sensor
Devices
Solid State, Hard Drive, and Flash Drive Storage
General Description
The DSC2311 is a crystal-less™ clock generator that is
factory-configurable to simultaneously output two
separate frequencies from 2.3 MHz to 170 MHz. The
clock generator uses proven silicon MEMS technology
to provide low jitter and high frequency stability across
a wide range of supply voltages and temperatures. By
eliminating the external quartz crystal, crystal-less
clock generators significantly enhance reliability and
accelerate product development, while meeting
stringent clock performance criteria for a variety of
consumer electronics, communications, and storage
applications.
DSC2311 has an Output Enable/Disable feature that
allows it to disable the outputs when OE is low. The
device is available in a space-saving 6-pin 2.5 mm x
2.0 mm crystal-less VDFN package that uses only a
single external bypass capacitor. This requires a PCB
footprint equivalent to that of a 1.0 mm x 1.0 mm
crystal-based clock generator.
Block Diagram
Control Circuitry
MEMS PLL
Output
Control
and
Divider
F
OUT2
F
OUT1
OE
Crystal-less™ Configurable Two-Output Clock Generator
DSC2311
DS20005611A-page 2 2016 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .......................................................................................................................................... –0.3V to +4.0V
Input Voltage .......................................................................................................................................–0.3V to V
DD
+0.3V
ESD Protection (HBM) ...............................................................................................................................................4 kV
ESD Protection (CDM) ............................................................................................................................................1.5 kV
Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Specifications: V
DD
= 3.3V; T
A
= +25°C unless otherwise specified.
Parameters Sym. Min. Typ. Max. Units Conditions
Supply Voltage (Note 1)V
DD
2.25 3.6 V
Supply Current (Note 2)I
DD
—2123mA
EN pin low. All outputs
disabled.
Frequency Stability (Note 3) f
——±25
ppm
Includes frequency
variations due to initial
tolerance, temperature, and
power supply voltage.
——±50
Aging f ±5 ppm One year at +25
°
C
Start-up Time (Note 4)t
SU
5 ms T = +25
°
C
Input Logic Levels
V
IH
0.75 x V
DD
——
V
Input logic high
V
IL
0.25 x V
DD
Input logic low
Output Disable Time t
DA
——5 ns
Output Enable Time t
EN
——20ns
Pull-Up Resistor (Note 2)—40k
Pull-up exists on all digital
IO
Output Logic Levels
V
OH
0.9 x V
DD
——
V
Output logic high, I = ±6 mA
V
OL
0.1 x V
DD
Output logic low, I = ±6 mA
Output Transition Time
t
R
—1.12.0
ns
Rise time. 20% to 80%;
C
L
= 15 pF
t
F
—1.42.0
Fall time. 20% to 80%;
C
L
= 15 pF
Frequency f
0
2.3 170
MHz
Commercial/Industrial temp.
range
3.3 100 Automotive temp. range
3.3 170
Extended Industrial temp.
range
Note 1: Pin 4 V
DD
should be filtered with a 0.01 µF capacitor.
2: Output is enabled if Enable pad is floated or not connected. Operating current = disabled current + I
DD
from F
OUT1
+ I
DD
from F
OUT2
. See Current Consumption graph for more information.
3: For other ppm stabilities, please contact the factory.
4: t
SU
is time to 100 ppm stable output frequency after V
DD
is applied and outputs are enabled.
5: Period jitter includes crosstalk from adjacent output.
2016 Microchip Technology Inc. DS20005611A-page 3
DSC2311
Output Duty Cycle SYM 45 55 %
Period Jitter (Note 5)J
PER
—3ps
RMS
F
O1
= F
O2
= 25 MHz
Integrated Phase Noise J
CC
—0.3
ps
RMS
200 kHz to 20 MHz @
25 MHz
—0.38
100 kHz to 20 MHz @
25 MHz
—1.72
12 kHz to 20 MHz @
25 MHz
ELECTRICAL CHARACTERISTICS (CONTINUED)
Specifications: V
DD
= 3.3V; T
A
= +25°C unless otherwise specified.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: Pin 4 V
DD
should be filtered with a 0.01 µF capacitor.
2: Output is enabled if Enable pad is floated or not connected. Operating current = disabled current + I
DD
from F
OUT1
+ I
DD
from F
OUT2
. See Current Consumption graph for more information.
3: For other ppm stabilities, please contact the factory.
4: t
SU
is time to 100 ppm stable output frequency after V
DD
is applied and outputs are enabled.
5: Period jitter includes crosstalk from adjacent output.

DSC2311KI2-R0002T

Mfr. #:
Manufacturer:
Description:
Standard Clock Oscillators Crystal-less Clock Gen.,-40-85C, 25ppm
Lifecycle:
New from this manufacturer.
Delivery:
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