TSM8N80
Taiwan Semiconductor
Document Number: DS_P0000151 1 Version: D15
N-Channel Power MOSFET
800V, 8A, 1.4Ω
Features
● Low R
DS(ON)
1.4Ω (Max.)
● Low gate charge typical @ 41nC (Typ.)
● Improve dV/dt capability
KEY PERFORMANCE PARAMETERS
PARAMETER VALUE UNIT
V
DS
800 V
R
DS(on)
(max) 1.4 Ω
Q
g
41 nC
APPLICATION
● Power Supply
● Lighting.
Notes: Moisture sensitivity level: level 3. Per J-STD-020
(T
A
= 25°C unless otherwise noted)
PARAMETER SYMBOL
TO-220
ITO-220
UNIT
Drain-Source Voltage V
DS
800 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current
(Note 1)
T
C
= 25°C
I
D
8
A
T
C
= 100°C 4.9
Pulsed Drain Current
(Note 2)
I
DM
32 A
Total Power Dissipation @ T
C
= 25°C P
DTOT
250 40.3 W
Single Pulsed Avalanche Energy
(Note 3)
E
AS
160 mJ
Single Pulsed Avalanche Current
(Note 3)
I
AS
8 A
Repetitive Avalanche Energy E
AR
25 mJ
Peak Diode Recovery
(Note 7)
dV/dt
4.5 V
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
PARAMETER SYMBOL
TO-220
ITO-220
UNIT
Junction to Case Thermal Resistance R
ӨJC
0.5 3.1 °C/W
Junction to Ambient Thermal Resistance R
ӨJA
62.5 °C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
