JDP2S02ACT
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02ACT
UHF~VHF Band RF Switch Applications
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
• Low series resistance: r
s
= 1.0 Ω (typ.)
• Low capacitance: C
T
= 0.3 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Reverse voltage V
R
30 V
Forward current I
F
50 mA
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Reverse voltage V
R
I
R
= 10 μA 30 ⎯ ⎯ V
Reverse current I
R
V
R
= 30 V ⎯ ⎯ 0.1 μA
Forward voltage V
F
I
F
= 50 mA ⎯ 0.9 0.94 V
Capacitance(Note2) C
T
V
R
= 1 V, f = 1 MHz ⎯ 0.3 0.4 pF
Series resistance r
s
I
F
= 10 mA, f = 100 MHz ⎯ 1.0 1.5 Ω
Note1: Signal level when capacitance is measured. V
sig
= 100 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1P1A
Weight: 0.00077g (typ.)
Unit: mm
02
Cathode
Part Number
CST2
Start of commercial production
2003-11
