NXP Semiconductors
PMEG4010AESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG4010AESB All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 6 October 2015 3 / 14
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage T
j
= 25 °C - 40 V
I
F
forward current T
sp
≤ 140 °C; δ = 1 - 1.4 A
δ = 0.5 ; f = 20 kHz; T
amb
≤ 115 °C;
square wave
[1] - 1 AI
F(AV)
average forward current
δ = 0.5 ; f = 20 kHz; T
sp
≤ 145 °C;
square wave
- 1 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ ≤ 0.25 - 4 A
I
FSM
non-repetitive peak forward
current
t
p
= 8 ms; T
j(init)
= 25 °C; square wave - 10 A
[2] - 0.525 W
[3] - 1 W
P
tot
total power dissipation T
amb
≤ 25 °C
[1] - 1.78 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm
2
each.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2] - - 240 K/W
[1][3] - - 125 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1][4] - - 70 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[5] - - 15 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm
2
each.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Soldering point of anode tab.
NXP Semiconductors
PMEG4010AESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG4010AESB All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 6 October 2015 4 / 14
aaa-016800
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-016801
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.25
0.33
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for anode and cathode 1 cm
2
each
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PMEG4010AESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG4010AESB All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 6 October 2015 5 / 14
aaa-016802
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
10
2
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)R
reverse breakdown
voltage
I
R
= 10 mA; t
p
= 300 µs; δ = 0.02 ;
T
j
= 25 °C
40 - - V
I
F
= 1 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 145 - mV
I
F
= 10 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 205 - mV
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 275 330 mV
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 305 - mV
I
F
= 500 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 365 425 mV
I
F
= 700 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 395 - mV
V
F
forward voltage
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
- 435 505 mV
V
R
= 5 V; t
p
≤ 3 ms; δ ≤ 0.3 ; T
j
= 25 °C - 10 - µA
V
R
= 10 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
- 15 60 µA
I
R
reverse current
V
R
= 20 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
- 30 115 µA

PMEG4010AESBYL

Mfr. #:
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 1A MEGA Schottky Barrier Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
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