IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYX40N450HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fS
I
C
= 40A, V
CE
= 10V, Note 1 18 30 S
C
ies
3550 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 146 pF
C
res
67 pF
Q
g
170 nC
Q
ge
I
C
= 40A, V
GE
= 15V, V
CE
= 1000V 19 nC
Q
gc
70 nC
t
d(on)
36 ns
t
r
330 ns
t
d(off)
110 ns
t
f
1120 ns
t
d(on)
46 ns
t
r
740 ns
t
d(off)
118 ns
t
f
1010 ns
R
thJC
0.19 °C/W
R
thCS
0.15 °C/W
Resistive Switching Times, T
J
= 125°C
I
C
= 40A, V
GE
= 15V
V
CE
= 960V, R
G
= 2
Resistive Switching Times, T
J
= 25°C
I
C
= 40A, V
GE
= 15V
V
CE
= 960V, R
G
= 2
Note: 1. Pulse test, t < 300s, duty cycle, d < 2%.
TO-247PLUS-HV Outline
1 - Gate
2 - Emitter
3,4 - Collector
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
E1
Q
L
b
c
e
4
D
A
R
E
b1
A2
L1
D3
E2
D2
D1
E3
4X
3X
3X
A3
e1
2X
A1
1 2
3