© Semiconductor Components Industries, LLC, 2009
July, 2009 Rev. 3
1 Publication Order Number:
MC33232/D
MC33232
Power Factor Controller
The MC33232 is the monolithic Integrated Circuit using the
SMARTMOS
®
process as the new technology. And is active power
factor controller specially design for use as offline power converter
application. This integrated circuit features an internal startup timer
for standalone application, a one quadrant multiplier for near unity
power factor, zero current detector to ensure critical condition
operation, transconductance error amplifier, quickstart circuit for
enhanced startup, trimmed internal bandgap reference, current sensing
comparator, a totem pole output ideally suited for drive a power
MOSFET, and a one shotrigger circuit to eliminate a problem at the
light loading.
Also included are protective features consisting of an overvoltage
comparator to eliminate runaway output voltage due to removal, and a
protect circuit to eliminate thermal runaway. This device is available
in dualinline and surface mount plastic package.
Features
One Shottrigger Circuit to Eliminate a Problem at the Light Loading
Overvoltage Comparator Eliminates Runaway Output Voltage
Quickstart Circuit for Enhanced Startup
Internal Startup Timer
One Quadrant Multiplier
Zero Current Detector
Trimmed 2% Internal Bandgap Reference
Totem Pole Output with High State Clamp
Undervoltage Lockout with 6.0 V of Hysteresis
Low Startup and Operating Current
These are PbFree Devices
MARKING
DIAGRAMS
A = Assembly Location
WL or L = Wafer Lot
Y = Year
WW or W = Work Week
G or G = PbFree Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SILICON MONOLITHIC
INTEGRATED CIRCUIT
18
5
3
4
Voltage Feedback
Input
Multiplier Input
V
CC
7
6
2
Drive Output
Compensation
Current Sense
Input
Zero Current
Detect Input
GND
PDIP8
P SUFFIX
CASE 626
SOIC8
D SUFFIX
CASE 751
MC33232P
AWL
YYWWG
33232
ALYW
G
1
8
PIN ASSIGNMENT
MC33232
http://onsemi.com
2
Figure 1. Simplified Block Diagram
POR
1.4 V
5.3 V
2.5 V
Reference
28 V
16 V
UVLO
+
1.6 V/1.4 V
+
Zero Current
Detector
TSD
Timer
Quickstart
8
5
7
4
1
One-shot
+
Multiplier
3
6
Over Voltage
Comparator
2
+
V
ref
Err Amp
+
Current
Sensor
5
k
2p
1.067
V
ref
1.5 V
ORDERING INFORMATION
Device
Operating Junction
Temperature Range
Package Shipping
MC33232PG
40°C to +150°C
PDIP8
(PbFree)
50 Units / Rail
MC33232DG
SOIC8
(PbFree)
98 Units / Rail
MC33232DR2G
SOIC8
(PbFree)
2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MC33232
http://onsemi.com
3
MAXIMUM RATINGS
Parameter Symbol Value Unit
Total Power Supply and Zener Current (I
CC
+ I
Z
) 30 mA
Output Current, Source or Sink (Note 1)
Peak Current (Under 0.5 msec)
DC (Continuously Current)
I
O
750
300
mA
Current Sense, Multiplier and Voltage Feedback Input V
in
0.3 to 10 V
Zero Current Detect Input
High State Forward Current
Low State Reverse Current
I
in
50
10
mA
Power Dissipation and Thermal Characteristic
D Suffix, Plastic Package, Case 751
Maximum Power Dissipation @ T
A
= 70°C
Thermal Resistance, JunctiontoAir
P Suffix, Plastic Package, Case 626
Maximum Power Dissipation @ T
A
= 70°C
Thermal Resistance, JunctiontoAir
P
D
R
q
JA
P
D
R
q
JA
450
178
800
100
mW
°C/W
mW
°C/W
Operating Junction Temperature T
J
+150 °C
Storage Temperature T
stg
55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Maximum package power dissipation limits must be observed.
RECOMMENDED OPERATING CONDITION (V
CC
= 12 V and T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Operating Frequency (R
ZCD
= 4.7 kW, C
err
= 0.68 mF)
F MHz
Normal Loading 0.4
Under Loading 1.0
External Resistance for Zero Current Detect Control R
ZCD
4.7
kW
Operating Ambient Temperature T
A
20 +85 °C
ELECTRICAL CHARACTERISTICS (V
CC
= 12 V, for typical values T
A
= 20°C ~ +85°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
ERROR AMPLIFIER
Voltage Feedback Input Threshold V
FB
V
T
A
= 25°C 2.465 2.5 2.535
T
A
= 20°C ~ +85°C (V
CC
= 12 V ~ 25 V) 2.44 2.54
Line Regulation (V
CC
= 12 V ~ 25 V, T
A
= 25°C) Reg
line
1.0 10 mV
Input Bias Current (V
FB
= 0 V) I
IB
0.1 0.5
mA
Transconductance (T
A
= 25°C) gm 80 100 130
mmho
Output Current (V
CC
= 12 V ~ 28 V, T
A
= 25°C)
mA
Source (V
FB
= 2.3 V) I
source
10
Sink (V
FB
= 2.7 V) I
sink
10
Output Voltage Swing V
High State (V
FB
= 2.3 V) V
OH(ea)
5.8 6.2
Low State (V
FB
= 2.7 V) V
OL(ea)
1.7 2.4
OVERVOLTAGE COMPARATOR
Voltage Feedback Input Threshold V
TH
1.04 V
FB
1.067 V
FB
1.095 V
FB
V
OVERTEMPERATURE PROTECT CIRCUIT (This item is just reference value without any specifying)
Detect Temperature TSD 120 °C

MC33232P

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Power Factor Correction - PFC Critical Mode PFC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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