Characteristics STPS41L60C
2/9 Doc ID 8616 Rev 6
1 Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.42 x I
F(AV)
+ 0.007 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current
T
C
= 125 °C
δ = 0.5
Per diode
Per device
20
40
A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal 220 A
P
ARM
(1)
Repetitive peak avalanche power
tp = 1 µs T
j
= 25 °C
9500 W
V
ARM
(2)
Maximum repetitive peak avalanche voltage t
p
< 1 µs, T
j
< 150 °C, I
AR
< 35 A 80 V
V
ASM
(2)
Maximum single pulse peak avalanche voltage t
p
< 1 µs, T
j
< 150 °C, I
AR
< 35 A 80 V
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(3)
150 °C
1. For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
<
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
Per diode
Total
1.5
0.8
° C/W
R
th (c)
Coupling 0.1
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
600
µA
T
j
= 125 °C
100 175
mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 20 A 0.60
V
T
j
= 125 °C
I
F
= 20 A 0.50 0.58
T
j
= 25 °C
I
F
= 40A 0.77
T
j
= 125 °C
I
F
= 40A 0.67 0.71
1. Pulse test: t
p
= 380 µs, δ < 2%
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