MMG38151BT1
1
RF Device Data
Freescale Semiconductor, Inc.
MMG38151BT1
0–6000 MHz, 17.1 dB @ 3800 MHz
13.4 dBm
BTS Driver
BTS Driver
Broadband Amplifier
The MMG38151BT1 is a general purpose amplifier that is internally
input and output matched. It is designed for a broad range of Class A ,
small -- signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz s uch as c ellular,
PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small --
signal RF.
Features
Frequency: 0 to 6000 MHz
P1dB: 13.4 dBm @ 3800 MHz
Small--Signal Gain: 17.1 dB @ 3800 MHz
Third Order Output Intercept Point: 25.0 dBm @ 3800 MHz
Single 5 V Supply
Internally Matched to 50 Ohms
Cost--effective SOT--89 Surface Mount Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
SOT--89
Table 1. Typical Performance
(1)
Characteristic Symbol 900 MHz 2140 MHz 2700 MHz 3800 MHz Unit
Small--Signal Gain (S21) G
p
19.4 17.8 17.2 17.1 dB
Input Return Loss (S11) IRL --14.7 --16.8 --10.8 -- 11 . 0 dB
Output Return Loss (S22) ORL --22.0 --10.4 -- 8 . 7 --14.4 dB
Power Output @1dB Compression P1dB 18.4 15.8 15.0 13.4 dBm
Third Order Output Intercept Point OIP3 31.8 27.9 27.0 25.0 dBm
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage V
CC
7 V
Supply Current I
CC
250 mA
RF Input Power P
in
10 dBm
Storage Temperature Range T
stg
--65 to +150 C
Junction Temperature T
J
175 C
Table 3. Thermal Characteristics
Characteristic Symbol Value
(2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 85C, 5 Vdc, 50 mA, no RF applied
R
JC
57 C/W
1. V
CC
=5Vdc,T
A
=25C, 50 ohm system.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Document Number: MMG38151B
Rev. 1, 12/2014
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMG38151BT1
Table 4. Electrical Characteristics (V
CC
= 5 Vdc, 900 MHz, T
A
=25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Symbol Min Typ Max Unit
Small--Signal Gain (S21) G
p
18 19.4 dB
Input Return Loss (S11) IRL --14.7 dB
Output Return Loss (S22) ORL --22.0 dB
Power Output @ 1dB Compression P1dB 18.4 dBm
Third Order Output Intercept Point OIP3 31.8 dBm
Noise Figure NF 3.2 dB
Supply Current I
CC
39 47 55 mA
Supply Voltage V
CC
5 V
Table 5. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD 22--A114) 1A
Machine Model (per EIA/JESD 22--A115) A
Charge Device Model (per JESD 22--C101) IV
Table 6. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020 1 260 C
Table 7. Functional Pin Description
Pin
Number
Pin Function
1 RF
in
2 Ground
3 RF
out
/DC Supply
Figure 1. Functional Diagram
32
1
2
MMG38151BT1
3
RF Device Data
Freescale Semiconductor, Inc.
50 OHM APPLICATION CIRCUIT: 300--6000 MHz
MMG30XX
Figure 2. 50 Ohm Test Circuit Schematic
RF
OUTPUT
RF
INPUT
V
SUPPLY
C3
C4
Z1 Z2
C1
Z5
C2
R1
L1
V
CC
Z4Z3
DUT
Figure 3. 50 Ohm Test Circuit Component Layout
C1
L1
C2
R1
C4
C3
Z1, Z5 0.347 x 0.058 Microstrip
Z2 0.575 x 0.058 Microstrip
Z3 0.172 x 0.058 Microstrip
Z4 0.403 x 0.058 Microstrip
Rev. 2
PCB actual size: 21.25.
D43570
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2 150 pF Chip Capacitors C0603C151J5RAC Kemet
C3 0.01 F Chip Capacitor C0603C103J5RAC Kemet
C4 1000 pF Chip Capacitor C0603C102J5RAC Kemet
L1 56 nH Chip Inductor HK160856NJ--T Taiyo Yuden
R1
0 Ω Chip Resistor
ERJ3GEY0R00V Panasonic
PCB Getek G rade ML200C, 0.031,
r
=4.1 D43570 MTL

MMG38151BT1

Mfr. #:
Manufacturer:
NXP / Freescale
Description:
Operational Amplifiers - Op Amps MMG38151B/SIL3///REEL 7 Q2 NDP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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