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DMP1046UFDB-7

P1-P3P4-P6
DMP1046UFDB
Document number: DS37712 Rev. 2 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DM
P1046UFDB
ADVANCED I NF O R M A T I O N
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON) max
I
D MAX
T
A
= +25°C
P-Channel
-12V
61mΩ @ V
GS
= -4.5V
-3.8A
81mΩ @ V
GS
= -2.5V
-3.3A
115mΩ @ V
GS
= -1.8V
-2.8A
Description
This MOSFET is designed to minimize the on-state resistance (R
DS(on)
)
and yet maintain superior switching performance, making it ideal for
high-efficiency power management applications.
Applications
• Load Switch
• Power Management Functions
• Portable Power Adaptors
Features
• Low On-Resistance
• Low Input Capacitance
• Low Profile, 0.6mm Max Height
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: U-DFN2020-6
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
• Terminals Connections: See Diagram Below
• Weight: 0.0065 grams (Approximate)
Ordering Information
(Note 4)
Case
Packaging
DMP1046UFDB -7 U-DFN2020-6 3,000/Tape & Reel
DMP1046UFDB -13 U-DFN2020-6 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
2015
2016
2017
201
8
201
9
20
20
20
21
Code
C D E F G H I
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Bottom View
Internal Schematic
P6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
S1
G1
D2
S2
G2
D1
D2
Pin1
U-DFN2020-6
D1
D2
S2
G
2
D
1
S1
G1
P6
Y
M
U-DFN2020-6
DMP1046UFDB
Document number: DS37712 Rev. 2 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DM
P1046UFDB
ADVANCED I NF O R M A T I O N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-12 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.8
-3.0
A
t < 5s
T
A
= +25°C
T
A
= +70°C
I
D
-5.0
-4.0
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
-1
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
-15 A
Avalanche Current (L = 0.1mH)
I
AS
-12 A
Avalanche Energy (L = 0.1mH)
E
AS
8 mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Steady State
P
D
1.4
W
t < 5s 2.2
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θ
JA
92
°C/W
t < 5s 55
Thermal Resistance, Junction to Case (Note 5)
R
θ
J
C
20
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note
6
)
Drain-Source Breakdown Voltage
BV
DSS
-12 - - V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
- - -1.0 µA
V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note
6
)
Gate Threshold Voltage
V
GS(th)
-0.4 - -1 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
-
37 61
mΩ
V
GS
= -4.5V, I
D
= -3.6A
-
47 81
V
GS
= -2.5V, I
D
= -3.2A
-
63 115
V
GS
= -1.8V, I
D
= -1.0A
Diode Forward Voltage
V
SD
- -0.65 -1.2 V
V
GS
= 0V, I
S
= -4.5A
DYNAMIC CHARACTERISTICS
(Note
7
)
Input Capacitance
C
iss
- 915
-
pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 225
-
pF
Reverse Transfer Capacitance
C
rss
- 183
-
pF
Gate Resistance
R
g
- 56.9
-
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
- 10.7
-
nC
V
DS
= -6V, I
D
= -4.3A
Total Gate Charge (V
GS
= -8V)
17.9
nC
Gate-Source Charge
Q
gs
- 1.7
-
nC
Gate-Drain Charge
Q
gd
- 3.0
-
nC
Turn-On Delay Time
t
D(on)
-
5.7
- ns
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6Ω, R
G
= 1Ω
Turn-On Rise Time
t
r
-
11.5
- ns
Turn-Off Delay Time
t
D(off)
-
27.8
- ns
Turn-Off Fall Time
t
f
-
26.4
- ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMP1046UFDB
Document number: DS37712 Rev. 2 - 2
3 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DM
P1046UFDB
ADVANCED I NF O R M A T I O N
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
0
1
2
3
4
5
6
7
8
9
10
0 1 2 3 4 5
V = 1.2V
GS
V = 1.5V
GS
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
V = -5.0V
DS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A
I , DRAIN SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
1 3 5 7 9 11 13 15 17 19 21
V = -4.5V
GS
V = -2.5V
GS
V = -1.8V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
1 2 3 4 5 6 7 8
I = -3.6A
D
I = -3.2A
D
I = -1A
D
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
0.02
0.025
0.03
0.035
0.04
0.045
0.05
1 3 5 7 9 11 13 15 17 19 21
V = -4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
DS(ON)
ON-RESISTANCE (NORMALIZE D)
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
V = -2.5V
GS
I = -3.0A
D
V = -4.5V
GS
I = -5A
D
P1-P3P4-P6

DMP1046UFDB-7

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Trans MOSFET P-CH 12V 3.8A 6-Pin UDFN EP T/R
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