1999 Sep 20 3
NXP Semiconductors Product data sheet
Schottky barrier double diodes BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
= 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
continuous reverse voltage − 60 V
I
F
continuous forward current − 1 A
I
FSM
non-repetitive peak forward current t
p
= 8.3 ms; half sinewave;
JEDEC
method
− 10 A
I
RSM
non-repetitive peak reverse current t
p
= 100 μs − 0.5 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
forward voltage see Fig.5
I
F
= 100 mA 400 mV
I
F
= 1 A 650 mV
I
F
= 2 A 850 mV
I
R
reverse current V
R
= 60 V; note 1; see Fig.6 350 μA
V
R
= 60 V; T
j
= 100 °C; note 1;
see Fig.6
8 mA
C
d
diode capacitance f = 1 MHz; V
R
= 4 V; see Fig 7 60 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 100 K/W
