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DMG2301U-7

P1-P3P4-P6
DMG2301U
Document number: DS31848 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG2301U
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
-20V
80mΩ @ V
GS
= 4.5V
-2.7A
110mΩ @ V
GS
= 2.5V
-2.1A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Motor control
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG2301U-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018
Code W X Y Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Internal Schematic
Top View
Pin Configuration
D
G
S
G21 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
G21
YM
SOT23
Source
Gate
Drain
Chengdu A/T Site
Shanghai A/T Site
DMG2301U
Document number: DS31848 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG2301U
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-2.7
-2.1
A
Continuous Drain Current (Note 5) V
GS
= -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-2.1
-1.7
A
Pulsed Drain Current (Note 6)
I
DM
-27 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
0.8 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
θJA
157 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20
V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
-1.0
A
V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100 nA
V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-0.45
-1.0 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
80
mΩ
V
GS
= -4.5V, I
D
= -2.8A
110
V
GS
= -2.5V, I
D
= -2.0A
Forward Transfer Admittance
|Y
fs
|
10
S
V
DS
= -5V, I
D
= -2.8A
Diode Forward Voltage
V
SD

-0.75 -1.0 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
608
pF
V
DS
= -6V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
82
pF
Reverse Transfer Capacitance
C
rss
72
pF
Gate Resistance
R
G

44.9

Ω
V
GS
= 0V, V
DS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
6.5
nC
V
GS
= -4.5V, V
DS
= -10V, I
D
= -3A
Gate-Source Charge
Q
g
s
0.9
nC
Gate-Drain Charge
Q
g
d
1.5
nC
Turn-On Delay Time
t
D
(
on
)
12.5 40 ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10, R
G
= 1.0, I
D
= -1A
Turn-On Rise Time
t
r
10.3 30 ns
Turn-Off Delay Time
t
D
(
off
)
46.5 140 ns
Turn-Off Fall Time
t
f
22.2 66 ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature..
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG2301U
Document number: DS31848 Rev. 3 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG2301U
NEW PRODUCT
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , D
AIN
EN
(A)
D
V = -1.2V
GS
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -8.0V
GS
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0
0.05
0.10
0.15
0.20
0.25
0.1 1 10
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
0
0.04
0.08
0.12
0.16
02 4 6 810
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
, D
AIN-S
E
ON-RESISTANCE (NORMALIZED)
DSON
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = -5V
I = -10A
GS
D
V = -2.5V
I = -5A
GS
D
0
0.04
0.08
0.12
0.16
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE ( )
DSON
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = -5V
I = -10A
GS
D
V = -2.5V
I = -5.5A
GS
D
P1-P3P4-P6

DMG2301U-7

Mfr. #:
Buy DMG2301U-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET P-CHANNEL SOT-23
Lifecycle:
New from this manufacturer.
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