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VS-HFA08TB120S-M3

P1-P3P4-P6P7-P9P10-P11
VS-HFA08TB120S-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Oct-17
1
Document Number: 96218
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08TB120S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the t
b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRIMARY CHARACTERISTICS
I
F(AV)
8 A
V
R
1200 V
V
F
at I
F
2.4 V
t
rr
(typ.) 28 ns
T
J
max. 150 °C
Package D
2
PAK (TO-263AB)
Circuit configuration Single
D
2
PAK (TO-263AB)
1
2
3
Base
cathode
Anode
1
3
2
N/C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
1200 V
Maximum continuous forward current I
F
T
C
= 100 °C 8
ASingle pulse forward current I
FSM
130
Maximum repetitive forward current I
FRM
32
Maximum power dissipation P
D
T
C
= 25 °C 73.5
W
T
C
= 100 °C 29
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
VS-HFA08TB120S-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Oct-17
2
Document Number: 96218
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 1200 - -
V
Maximum forward voltage V
FM
I
F
= 8.0 A - 2.6 3.3
I
F
= 16 A - 3.4 4.3
I
F
= 8.0 A, T
J
= 125 °C - 2.4 3.1
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
-0.3110
μA
- 135 1000
Junction capacitance C
T
V
R
= 200 V - 11 20 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 28 -
nst
rr1
T
J
= 25 °C
I
F
= 8.0 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-6395
t
rr2
T
J
= 125 °C - 106 160
Peak recovery current
I
RRM1
T
J
= 25 °C - 4.5 8.0
A
I
RRM2
T
J
= 125 °C - 6.2 11
Reverse recovery charge
Q
rr1
T
J
= 25 °C - 140 380
nC
Q
rr2
T
J
= 125 °C - 335 880
Peak rate of fall of
recovery current during t
b
dI
(rec)M
/dt1 T
J
= 25 °C - 133 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 85 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--1.7
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 40
Weight
-2.0- g
-0.07- oz.
Marking device Case style D
2
PAK (TO-263AB) HFA08TB120S
VS-HFA08TB120S-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Oct-17
3
Document Number: 96218
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0246810
1
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
0300 900600 1200
0.01
0.1
1
10
100
1000
T
J
= 125 °C
T
J
= 100 °C
T
J
= 150 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
1 10 100 10 0001000
1
100
10
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P9P10-P11

VS-HFA08TB120S-M3

Mfr. #:
Buy VS-HFA08TB120S-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1200V 8A TO-263 HexFred
Lifecycle:
New from this manufacturer.
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